A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (258) and a titanium layer (256) of a semiconductor device substrate (250) are polished using one polisher (10) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (132) from two different source containers (111 and 112), wherein the first slurry is dispensed until the tungsten is removed and then the slurry dispense is switched to the second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.

Claims

22 · 2 independent · depth 3

22 granted claims

›1.independentA process for forming a semiconductor device comprising: providing a substrate having: a semiconductor material; a patterned insulating layer overlyin…+15

›2.↳ 1The process of claim 1, wherein the second material is selected from a group consisting of aluminum, copper, and tungsten, and the first material is a…d2

›3.↳ 1The process of claim 1, wherein the first material is titanium, and wherein the second oxidizing component is oxalic acid.d2

›4.↳ 1The process of claim 1, wherein: the second material is tungsten and the first material is titanium; the first oxidizing component is ferric nitrate; …d2

›5.↳ 1The process of claim 1, wherein the patterned insulating layer overlies a conductive region of the substrate and is patterned to include an opening ha…d2

›6.↳ 1The process of claim 1, wherein polishing the second conductive layer comprises introducing the first polishing fluid without introducing the second p…d2

›7.↳ 1The process of claim 1, further comprising placing the substrate into a polisher, wherein polishing the second conductive layer and polishing the firs…d2+2

›10.↳ 1The process of claim 1, wherein the second material is tungsten and wherein polishing the second conductive layer uses a polishing pad having a Shore …d2

›11.↳ 1The process of claim 1, wherein the first polishing fluid contains a heavy metal, and wherein after polishing the first conductive layer, the patterne…d2+1

›13.↳ 1The process of claim 1, wherein each of the first and second polishing fluids is acidic.d2

›20.↳ 1The process of claim 1, wherein a pH of the first polishing fluid is at most two.d2+1

›22.↳ 1The process of claim 1, wherein a pH of the second polishing fluid is at most two.d2

›14.independentA process of forming a semiconductor device comprising: providing a semiconductor substrate having a conductive member; depositing an insulating layer…+5

Classifications

17 codes

USPC · US Patent Classification

438/645438/692451/59438/652451/37451/57438/690438/691438/689438/654438/629451/41438/626438/633438/628438/644438/693

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John F. Niebling

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