A method and an apparatus for producing a wafer from a crystalline ingot, wherein the method supplies an etching gas, having a high etching property for at least one constituent of the crystalline ingot, in a state of a molecular beam stream on a predetermined part of the crystalline ingot to be processed, volatilizing the predetermined part gradually from the ingot, and then removing the predetermined part entirely so as to cut the wafer from the ingot. According to the method, waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.

Claims

7 · 1 independent · depth 3

7 granted claims

›1.independentA method for cutting a wafer from a crystalline ingot comprising: supplying an etching gas for at least one constituent of the crystalline ingot, in a…+6

›2.↳ 1The method according to claim 1, wherein the etching gas comprises at least one component selected from the group consisting of ClF.sub.3, NF.sub.3, C…d2+1

›3.↳ 1The method according to claim 1, wherein the etching gas is supplied on the part of the crystalline ingot to be cut under a pressure in the range of 1…d2

›5.↳ 1The method according to claim 1, wherein a spaced plurality of supplies of the etching gas, in a state of molecular beam streams, are supplied on thos…d2

›6.↳ 1The method according to claim 1, wherein a single supply of the etching gas, in a state of a molecular beam stream, is supplied on the crystalline ing…d2

›7.↳ 1The method according to claim 1, wherein said ingot is a prismatic ingot of Si monocrystal and said etching gas is ClF.sub.3.d2

Classifications

5 codes

USPC · US Patent Classification

438/706234/46831/17156/345216/17

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2.6 y

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Benjamin Utech

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