Semiconductor detection apparatus for detecting nuclear radiation

A semiconductor detection apparatus for detecting nuclear radiation comprising: a single semiconductor wafer having a first surface and a second surface; a first pn junction formed in said first surface of said wafer; a second pn junction formed in said second surface of said wafer; a first voltage supply coupled to provide a first reverse bias voltage to said first pn junction; a second voltage supply coupled to provide a second reverse bias voltage to said second pn junction; a first signal output electrode connected to said first pn junction; a second signal output electrode connected to said second pn junction; signal acquisition means for retrieving output signals from said electrodes; and analysis means for analyzing radiation on the basis of said output signals.

A semiconductor radiation detection apparatus for detecting nuclear radiation comprising: a single semiconductor wafer having a first surface and a second surface; a first diffused layer formed in said first surface of said wafer, and providing a pn junction therein; a second diffused layer formed in said second surface of said wafer, and providing a pn junction therein; a first electrode connected to said first diffused layer; a second electrode connected to said second diffused layer; a first bias means for applying a reverse bias voltage to said first electrode; a second bias means for applying a reverse bias voltage to said second electrode; signal acquisition means for retrieving output signals from said electrodes; and analysis means for analyzing radiation on the basis of said output signals.

A semiconductor radiation detection apparatus for detecting nuclear radiation comprising: at least one semiconductor wafer having at least 50.OMEGA..multidot.cm resistivity; at least two pn junctions formed in top and bottom surfaces of said at least one wafer; at least two electrodes connected to said at least two pn junctions respectively; at least one common electrode connected to a substrate region of said at least one wafer; at least two bias means for applying reverse bias voltage to said at least two electrodes respectively; signal acquisition means for retrieving output signals from said at least two electrodes; and analysis means for analyzing radiation on the basis of said output signals.

A semiconductor radiation detection apparatus for detecting nuclear radiation comprising: at least two semiconductor wafers, each having a substrate region respectively; at least two pn junctions, one such pn junction being formed in each surface of said at least two wafers; at least two common electrodes,one such common electrode being connected to each of said substrate regions respectively; at least two output electrodes,one such output electrode being connected to each of said at least two pn junctions respectively; at least two bias means for applying reverse bias voltages to said at least two output electrodes respectively; signal acquisition means for retrieving output signals from said at least two output electrodes; and analysis means for analyzing radiation on the basis of said output signals.

A semiconductor radiation detection apparatus for detecting nuclear radiation comprising: at least one semiconductor wafer having a detection area at least 25 cm.sup.2 ; at least two pn junctions formed in front and rear surfaces of said at least one wafer; at least two output electrodes connected to said at least two pn junctions respectively; at least one common electrode connected to a substrate region of said at least one wafer; at least two bias means for applying reverse bias voltages to said at least two electrodes respectively; signal acquisition means for retrieving output signals from said at least two output electrodes; and analysis means for analyzing radiation on the basis of said output signals.

A method of detecting and distinguishing different kinds of nuclear radiation by differing energy levels, comprising the steps of: providing a semiconductor radiation detector having a first and second pn junctions formed on opposite sides of a semiconductor wafer, said pn junctions having respective first and second depletion regions associated therewith; applying first and second reverse bias voltages to said first and second pn junctions respectively; adjusting a thickness of each depletion region by varying said first and second reverse bias voltages respectively, so that said thickness of each depletion region is adapted to distinguish said different kinds of nuclear radiation; detecting output signals from each depletion region respectively; and analyzing said radiation on the basis of said output signals.

A method of detecting and distinguishing different kinds of nuclear radiation having differing energy levels, comprising the steps of: providing a semiconductor radiation detector having first and second pn junctions formed on opposite sides of a semiconductor wafer, said pn junctions having respective first and second depletion regions associated therewith; applying a reverse bias voltage to each of said pn junctions; adjusting a thickness of said first depletion region by varying said reverse bias voltage applied to said first pn junction, so that a first type of radiation impinging on said first depletion region penetrates through said first depletion region into said second depletion region, while a second type of radiation impinging on said first depletion region is absorbed therein; detecting output signals from each depletion region respectively; and analyzing radiation on the basis of said output signals.