An improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described. The improvement comprises the treatment of fluorine residues in the CVD deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such fluorine residues with one or more reducing gases which will react with the fluorine residues to form one or more gaseous or solid reaction products or a mixture of same.

Claims

20 · 3 independent · depth 4

20 granted claims

›1.independentAn improvement in a method for cleaning a chemical vapor deposition (CVD) deposition chamber in a semiconductor wafer processing apparatus which compr…+14

›2.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further includes reacting said …d2+1

›3.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further includes reacting said …d2+1

›4.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further includes reacting said …d2+1

›8.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further comprises contacting sa…d2

›9.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further comprises contacting sa…d2

›10.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further comprises flowing said …d2+1

›12.↳ 1The improvement of claim 1 wherein said step of contacting said fluorine residues with said one or more reducing gases further comprises maintaining a…d2+2

›15.↳ 1The improvement of claim 1 wherein said one or more reducing gases are selected from the class consisting of silane (SiH.sub.4), ammonia, hydrogen, ph…d2

›16.independentAn improved method for cleaning a chemical vapor deposition (CVD) deposition chamber in a semiconductor wafer processing apparatus wherein the improve…+3

›20.independentAn improved method for cleaning a chemical vapor deposition (CVD) deposition chamber in a semiconductor wafer processing apparatus wherein the improve…

Classifications

6 codes

USPC · US Patent Classification

134/22.1134/26156/345134/30134/36156/643

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1.9 y

676 days filing → grant

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Anthony McFarlane

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Citations: 9 back · 4 forward

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