A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

Description

25 parts

›CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of, under 35 U.S.C. § 119, Korean Patent Application No. 10-2019-0108398 filed in the Korean Intellectual Property Office on Sep. 2, 2019, the entire contents of which are incorporated herein by reference.

›BACKGROUND

1. Field

Devices, sensors, and electronic devices are disclosed.

2. Description of the Related Art

A photoelectric conversion device may receive incident light and convert the received incident light into an electrical signal. A photoelectric conversion device may include a photodiode and a phototransistor, and may be applied to (e.g., included in) a sensor or a photodetector.

Sensors may have higher resolutions and thus may have smaller pixel sizes. A sensitivity of a silicon photodiode in an organic sensor may be deteriorated based on reduced pixel size of the sensor and reduced absorption area of the silicon photodiode. Accordingly, organic materials that are capable of replacing silicon in photodiodes of organic sensors have been researched.

An organic material has a high extinction coefficient and is configured to selectively absorb light in a particular wavelength spectrum of light depending on a molecular structure of the organic material, and thus may simultaneously replace a photodiode and a color filter of a sensor and resultantly improve sensitivity of the sensor and contribute to high integration of the sensor.

However, since such organic materials exhibit different characteristics from those of silicon due to high binding energy and a recombination behavior associated with such organic materials, the characteristics of the organic material are difficult to precisely predict, and thus properties of a photoelectric conversion device may not be easily controlled.

›SUMMARY · 1 of 2

Some example embodiments provide one or more devices capable of improving charge extraction characteristics by reducing residual charge carriers.

Some example embodiments provide a sensor including one or more of the devices.

Some example embodiments provide electronic devices including one or more devices or one or more sensors.

According to some example embodiments, a device may include a first electrode and a second electrode, an active layer between the first electrode and the second electrode, and a plurality of auxiliary layers between the first electrode and the active layer. The plurality of auxiliary layers may include a first auxiliary layer and a second auxiliary layer, the first auxiliary layer proximate to the active layer in relation to the second auxiliary layer, the second auxiliary layer proximate to the first electrode in relation to the first auxiliary layer. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode may become deeper sequentially or shallower sequentially, such that a magnitude of the energy level of the first auxiliary layer is between a magnitude of the energy level of the active layer and a magnitude of the energy level of the second auxiliary layer, and the magnitude of the energy level of the second auxiliary layer is between the magnitude of the energy level of the first auxiliary layer and a magnitude of the work function of the first electrode. Energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode may satisfy Relationship Equation 1:

|Δϕ 1 −Δϕ 2 |≤0.1 eV [Relationship Equation 1]

wherein, in Relationship Equation 1, Δϕ 1 is an energy barrier between the active layer and the first auxiliary layer, and Δϕ 2 is an energy barrier between the second auxiliary layer and the first electrode.

The first auxiliary layer may be in contact with the active layer, and the second auxiliary layer may be in contact with the first electrode.

Energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode may satisfy Relationship Equations 2 and 3:

|Δϕ 1 −Δϕ 3 |≤0.1 eV [Relationship Equation 2]

|Δϕ 3 −Δϕ 2 |≤0.1 eV [Relationship Equation 3]

wherein, in Relationship Equations 2 and 3, Δϕ 1 is the energy barrier between the active layer and the first auxiliary layer, Δϕ 2 is the energy barrier between the second auxiliary layer and the first electrode, and Δϕ 3 is an energy barrier between the first auxiliary layer and the second auxiliary layer.

Each of Δϕ 1 , Δϕ 2 , and Δϕ 3 may be less than or equal to about 0.5 eV.

The energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode may satisfy Relationship Equations 1E, 2E, and 3E.

0<|Δϕ 1 −Δϕ 2 |≤0.05 eV [Relationship Equation 1E]

0<|Δϕ 1 −Δϕ 3 |≤0.05 eV [Relationship Equation 2E]

0<|Δϕ 3 −Δϕ 2 |≤0.05 eV [Relationship Equation 3E]

wherein, in Relationship Equation 1E to 3E, Δϕ 1 is the energy barrier between the active layer and the first auxiliary layer, Δϕ 2 is the energy barrier between the second auxiliary layer and the first electrode, and Δϕ 3 is the energy barrier between the first auxiliary layer and the second auxiliary layer.

The plurality of auxiliary layers further may include a third auxiliary layer between the first auxiliary layer and the second auxiliary layer. The energy level of the active layer, the energy level of the first auxiliary layer, an energy level of the third auxiliary layer, the energy level of the second auxiliary layer, and the work function of the first electrode become deeper sequentially or shallower sequentially, such that the magnitude of the energy level of the first auxiliary layer is between the magnitude of the energy level of the active layer and a magnitude of the energy level of the third auxiliary layer, the magnitude of the energy level of the third auxiliary layer is between the magnitude of the energy level of the first auxiliary layer and the magnitude of the energy level of the second auxiliary layer, and the magnitude of the energy level of the second auxiliary layer is between the magnitude of the energy level of the third auxiliary layer and the magnitude of the work function of the first electrode, and energy diagrams of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode may satisfy Relationship Equations 4 and 5:

|Δϕ 2 −Δϕ 4 |≤0.1 eV [Relationship Equation 4]

|Δϕ 1 −Δϕ 5 |≤0.1 eV [Relationship Equation 5]

wherein, in Relationship Equations 4 and 5, Δϕ 1 is the energy barrier between the active layer and the first auxiliary layer, Δϕ 2 is the energy barrier between the second auxiliary layer and the first electrode, Δϕ 4 is an energy barrier between the third auxiliary layer and the second auxiliary layer, and Δϕ 5 is an energy barrier between the first auxiliary layer and the third auxiliary layer.

The energy levels of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode may satisfy Relationship Equation 6.

|Δϕ 4 −Δϕ 5 |≤0.1 eV[Relationship Equation 6]

wherein, in Relationship Equation 6, Δϕ 4 the energy barrier between the third auxiliary layer and the second auxiliary layer, and Δϕ 5 is the energy barrier between the first auxiliary layer and the third auxiliary layer.

Δϕ 1 , Δϕ 2 , Δϕ 3 , Δϕ 4 and Δϕ 5 are each less than or equal to about 0.5 eV.

The first electrode may be an anode and the second electrode may be a cathode, and each energy barrier may be a difference between HOMO energy levels.

The device may include an electron buffer layer between the second electrode and the active layer.

The electron buffer layer may include a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof.

The electron buffer layer may include a first electron buffer layer and a second electron buffer layer, the first electron buffer layer proximate to the active layer in relation to the second electron buffer layer, the second electron buffer layer proximate to the second electrode in relation to the first electron buffer layer. A LUMO energy level of the active layer, a LUMO energy level of the first electron buffer layer, a LUMO energy level of the second electron buffer layer, and a work function of the second electrode become deeper sequentially, such that a magnitude of the LUMO energy level of the first electron buffer layer is between a magnitude of the LUMO energy level of the active layer and a magnitude of the LUMO energy level of the second electron buffer layer, and the magnitude of the LUMO energy level of the second electron buffer layer is between the magnitude of the LUMO energy level of the first electron buffer layer and a magnitude of the work function of the second electrode. Energy diagrams of the active layer, the first electron buffer layer, the second electron buffer layer, and the second electrode satisfy Relationship Equation 7:

›SUMMARY · 2 of 2

|Δϕ 6 −Δϕ 7 |≤0.1 eV [Relationship Equation 7]

wherein, in Relationship Equation 7, Δϕ 6 is an energy barrier between the active layer and the first electron buffer layer, and Δϕ 7 is an energy barrier between the second electron buffer layer and the second electrode, wherein the energy barriers of Δϕ 6 and Δϕ 7 are differences between LUMO energy levels.

The energy diagrams of the active layer, the first electron buffer layer, the second electron buffer layer and the second electrode may satisfy Relationship Equations 8 and 9:

|Δϕ 6 −Δϕ 8 |≤0.1 eV [Relationship Equation 8]

|Δϕ 7 −Δϕ 8 |≤0.1 eV [Relationship Equation 9]

wherein in Relationship Equations 8 and 9, Δϕ 6 is the energy barrier between the active layer and the first electron buffer layer, Δϕ 7 is the energy barrier between the second electron buffer layer and the second electrode, and Δϕ 8 is an energy barrier between the first electron buffer layer and the second electron buffer layer, wherein the energy barriers of Δϕ 6 , Δϕ 7 , Δϕ 8 are differences between LUMO energy levels.

The Δϕ 6 , Δϕ 7 , Δϕ 8 may each be less than or equal to about 0.5 eV.

The first electrode may be a cathode, the second electrode may be an anode, and the energy barrier may be a difference between LUMO energy levels.

The device may include a hole buffer layer between the second electrode and the active layer.

The first auxiliary layer and the second auxiliary layer may each have a thickness of less than or equal to about 10 nm.

The first auxiliary layer and the second auxiliary layer may each include an organic material.

The active layer may be a photoelectric conversion layer configured to absorb light in at least part of a wavelength spectrum and convert the absorbed light into an electrical signal.

A sensor may include the device.

An electronic device may include the device.

Residual charge carriers may be reduced to improve charge extraction characteristics.

›BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a device according to some example embodiments,

FIG. 2 is an energy diagram showing energy levels of the anode, auxiliary layer, and active layer in the device shown in FIG. 1 ,

FIG. 3 is a cross-sectional view showing a device according to some example embodiments,

FIG. 4 is an energy diagram showing energy levels of the anode, auxiliary layer, and active layer in the device shown in FIG. 3 ,

FIG. 5 is a cross-sectional view showing a device according to some example embodiments,

FIG. 6 is an energy diagram showing energy levels of the device shown in FIG. 5 ,

FIG. 7 is a cross-sectional view showing a device according to some example embodiments,

FIG. 8 is an energy diagram showing energy levels of the cathode, auxiliary layer, and active layer in the device shown in FIG. 7 ,

FIG. 9 is a cross-sectional view showing a device according to some example embodiments,

FIG. 10 is an energy diagram showing energy levels of the cathode, auxiliary layer and active layer in the device shown in FIG. 9 ,

FIG. 11 is a schematic cross-sectional view of an example of an image sensor according to some example embodiments,

FIG. 12 is a top plan view schematically showing an image sensor according to some example embodiments,

FIG. 13 is a cross-sectional view showing an example of the image sensor of FIG. 12 ,

FIG. 14 is a cross-sectional view showing an image sensor according to some example embodiments,

FIG. 15 is a top plan view schematically showing an image sensor according to some example embodiments,

FIG. 16 is a cross-sectional view of the image sensor shown in FIG. 15 ,

FIG. 17 is an energy diagram showing the energy levels from the anode to the active layer of one or more devices according to Examples 1 and 2,

FIG. 18 is a diagram showing the energy levels from the anode to the active layer of one or more devices according to Comparative Example 1,

FIG. 19 is a diagram showing the energy levels from the anode to the active layer of one or more devices according to Comparative Examples 2 and 6,

FIG. 20 is a diagram showing the energy levels from the anode to the active layer of one or more devices according to Comparative Example 3,

FIG. 21 is a diagram showing the energy levels from the anode to the active layer of one or more devices according to Comparative Examples 4 and 7,

FIG. 22 is a diagram showing the energy levels from the anode to the active layer of one or more devices according to Comparative Example 5,

FIG. 23 is a diagram showing the energy levels from the anode to the active layer of one or more devices according to Comparative Example 8,

FIG. 24 is a graph showing photoelectric conversion efficiency of one or more devices according to Example 1 and Comparative Examples 1 to 4,

FIG. 25 is a graph showing photoelectric conversion efficiency of one or more devices according to Example 2 and Comparative Examples 1, 6, and 7,

FIG. 26 is a schematic diagram of an electronic device according to some example embodiments,

›DETAILED DESCRIPTION · 1 of 18

Example embodiments will hereinafter be described in detail, and may be easily performed by those who have common knowledge in the related art. However, this disclosure may be embodied in many different forms and is not to be construed as limited to the example embodiments set forth herein.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it may be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. It will further be understood that when an element is referred to as being “on” another element, it may be above or beneath the other element.

It will be understood that elements and/or properties thereof may be recited herein as being “the same” or “equal” as other elements, and it will be further understood that elements and/or properties thereof recited herein as being “the same” as or “equal” to other elements may be “the same” as or “equal” to or “substantially the same” as or “substantially equal” to the other elements and/or properties thereof. Elements and/or properties thereof that are “substantially the same” as or “substantially equal” to other elements and/or properties thereof will be understood to include elements and/or properties thereof that are the same as or equal to the other elements and/or properties thereof within manufacturing tolerances and/or material tolerances. Elements and/or properties thereof that are the same or substantially the same as other elements and/or properties thereof may be structurally the same or substantially the same, functionally the same or substantially the same, and/or compositionally the same or substantially the same.

It will be understood that elements and/or properties thereof (e.g., structures, properties of one or more elements, lengths, distances, energy levels, energy barriers, or the like) described herein as being the “substantially” the same encompasses elements and/or properties thereof (e.g., structures, properties of one or more elements, lengths, distances, energy levels, energy barriers, or the like) that are the same within manufacturing tolerances and/or material tolerances and/or elements and/or properties thereof (e.g., structures, properties of one or more elements, lengths, distances, energy levels, energy barriers, or the like) that have a relative difference in magnitude that is equal to or less than 10%. Further, regardless of whether elements and/or properties thereof (e.g., structures, properties of one or more elements, lengths, distances, energy levels, energy barriers, or the like) are modified as “substantially,” it will be understood that these elements and/or properties thereof (e.g., structures, properties of one or more elements, lengths, distances, energy levels, energy barriers, or the like) should be construed as including a manufacturing or operational tolerance (e.g., ±10%) around the stated elements and/or properties thereof (e.g., structures, properties of one or more elements, lengths, distances, energy levels, energy barriers, or the like).

When the terms “about” or “substantially” are used in this specification in connection with a numerical value, it is intended that the associated numerical value include a tolerance of ±10% around the stated numerical value. When ranges are specified, the range includes all values therebetween such as increments of 0.1%.

Where elements, properties, or the like are described herein to have a “small” or “very small” difference between each other, it will be understood that a variation between the magnitudes of said elements and/or properties may be equal to or less than 10% of the magnitudes of the elements, properties, or the like being described.

As used herein, when a definition is not otherwise provided, “substituted” refers to replacement of hydrogen of a compound by a substituent selected from a halogen atom, a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid or a salt thereof, a silyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroaryl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, or a combination thereof.

As used herein, when a definition is not otherwise provided, “hetero” refers to one including 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si, and P.

As used herein, “combination” refers to a mixture and two or more stacking structures.

As used herein, the energy level is the highest occupied molecular orbital (HOMO) energy level or the lowest unoccupied molecular orbital (LUMO) energy level.

As used herein, the work function or energy level is expressed as an absolute value from the vacuum level (e.g., as an absolute magnitude). In addition, the work function or energy level (e.g., the magnitude thereof) is referred to be deep, high, or large, it may have a large absolute value based on “0 eV” of the vacuum level while when the work function work function or energy level (e.g., the magnitude thereof) is referred to be shallow, low, or small, it may have a small absolute value based on “0 eV” of the vacuum level.

As used herein, the work function and energy level are measured by photoelectron spectroscopy such as ultraviolet photoelectron spectroscopy (UPS) or AC-3 equipment (Riken Keiki Co. Ltd.). In particular, the work function and energy level may be obtained by measuring a photoelectric work function of thin films with a thickness of about 20 nm to about 30 nm using the AC-3 equipment and by calculating the emission energy due to the photoelectron effect for the irradiated energy by the following relationship:

›DETAILED DESCRIPTION · 2 of 18

[Relationship]

E=h·c/λ

(h: plank's constant, c: light velocity, and λ: wavelength).

Hereinafter, a device according to some example embodiments is described.

The device may include, in some example embodiments, a pair of electrodes and an active layer between the pair of electrodes, and the active layer may include, in some example embodiments, an opto-electronic material. The opto-electronic material may include, in some example embodiments, a material that receives light and exhibits an electric characteristics and/or a material that receives an electric field and emits light, but is not limited thereto. The device may be for example a photoelectric conversion device, a light emitting device, a solar cell, or a photo-sensor, but is not limited thereto.

The device may be, in some example embodiments, an organic device including at least one organic material, and may be an organic diode including at least one organic material. The organic device may be for example an organic photoelectric conversion device, an organic light emitting diode, an organic solar cell, or an organic photo-sensor, but is not limited thereto.

Herein, the photoelectric conversion device is described as an example of the device.

FIG. 1 is a cross-sectional view showing a device according to some example embodiments.

Referring to FIG. 1 , a device 100 according to some example embodiments includes an anode 10 , a cathode 20 , an active layer 30 , an auxiliary layer 40 , and an electron buffer layer 50 . As described herein, the anode 10 and cathode 20 may each be referred to as one of a first electrode or a second electrode, where the first electrode may be one of the anode 10 or the cathode 20 or the second electrode may be the other of the anode 10 or the cathode 20 .

The substrate (not shown), e.g., the semiconductor substrate 110 shown in at least FIGS. 11, 13-14, and 16 , may be disposed at the side of the anode 10 or the cathode 20 . The substrate may be for example made of (e.g., may at least partially comprise) an inorganic material such as glass, an organic material such as polycarbonate, polymethylmethacrylate, polyethyleneterephthalate, polyethylenenaphthalate, polyamide, polyethersulfone, or a combination thereof, or a silicon wafer. The substrate may be omitted.

The anode 10 and the cathode 20 face each other.

At least one of anode 10 or cathode 20 may be a transparent electrode. The transparent electrode may have a high transmittance of greater than or equal to about 80%. The transparent electrode may include, in some example embodiments, at least one of an oxide conductor, a carbon conductor, or a metal thin film. The oxide conductor may be for example one or more selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum zinc oxide (AZO). The carbon conductor may be one or more selected from graphene and carbon nanostructure. The metal thin film may be a very thin film including aluminum, magnesium silver, gold, an alloy thereof, or a combination thereof.

One of the anode 10 or the cathode 20 may be a reflective electrode. The reflective electrode may have for example a low transmittance of less than about 10% or a high reflectance of greater than or equal to about 5%. The reflective electrode may include a reflective conductor such as a metal and may include, for example aluminum (Al), silver (Ag), gold (Au), or an alloy thereof.

In some example embodiments, the anode 10 and the cathode 20 may each be a transparent electrode.

In some example embodiments, the anode 10 may be a transparent electrode and the cathode 20 may be a reflective electrode.

In some example embodiments, the anode 10 may be a reflective electrode and the cathode 20 may be a transparent electrode.

As shown in FIG. 1 , the active layer 30 may be disposed between the anode 10 and the cathode 20 .

The active layer 30 is a photoelectric conversion layer configured to absorb light in at least part of a wavelength spectrum (e.g., some or all of the visible wavelength spectrum, some or all of the infrared wavelength spectrum, some or all of the near-infrared wavelength spectrum, some or all of the ultraviolet wavelength spectrum, any combination thereof, or the like) and convert the absorbed light into an electrical signal. The photoelectric conversion layer may be configured to convert, in some example embodiments, a portion of light in a green wavelength spectrum (hereinafter referred to as “green light”), light in a blue wavelength spectrum (hereinafter referred to as “blue light”), light in a red wavelength spectrum (hereinafter referred to as “red light”), light in an infrared wavelength spectrum (hereinafter referred to as “infrared light”), and/or light in an ultraviolet wavelength spectrum (hereinafter referred to as “ultraviolet light”) into an electrical signal.

In some example embodiments, the active layer 30 may be configured to selectively absorb any one of blue light, green light, red light, infrared light, or ultraviolet light. Herein, the selective absorption of one selected from the blue light, green light, red light, infrared light, or ultraviolet light means that a peak absorption wavelength (λ max ) of a light-absorption spectrum may be in one of less than about 380 nm, greater than or equal to about 380 nm and less than about 500 nm, about 500 nm to about 600 nm, greater than about 600 nm and less than or equal to about 700 nm, or greater than about 700 nm and less than or equal to about 3000 nm, and a light-absorption spectrum in the corresponding wavelength region is significantly higher than those in the other wavelength spectrums.

The active layer 30 may include at least one p-type semiconductor 32 and at least one n-type semiconductor 34 which form a pn junction 36 and may produce excitons by receiving light from outside and then separate the produced excitons into holes and electrons.

The p-type semiconductor 32 and the n-type semiconductor 34 may be independently light-absorbing materials, and for example at least one of the p-type semiconductor 32 or the n-type semiconductor 34 may be an organic light-absorbing material. In some example embodiments, at least one of the p-type semiconductor 32 or the n-type semiconductor 34 may be a wavelength-selective light-absorbing material configured to selectively absorb light in a particular (or, alternatively, predetermined) wavelength spectrum, and for example at least one of the p-type semiconductor 32 or the n-type semiconductor 34 may be a wavelength-selective organic light-absorbing material. A peak absorption wavelength (λ max ) of the p-type semiconductor 32 and the n-type semiconductor 34 may be in the same wavelength spectrum or in a different wavelength spectrum.

›DETAILED DESCRIPTION · 3 of 18

In some example embodiments, the p-type semiconductor 32 may be an organic material having a core structure including an electron donating moiety, a pi conjugation linking group, and an electron accepting moiety.

The p-type semiconductor 32 may be for example represented by Chemical Formula 1, but is not limited thereto.

EDG-HA-EAG [Chemical Formula 1]

In Chemical Formula 1,

HA is a pi conjugation linking group and may be a C2 to C30 heterocyclic group having at least one of O, S, Se, Te, or Si,

EDG is an electron donating moiety and may be an electron-donating group, and

EAG is an electron accepting moiety and may be an electron accepting group.

In some example embodiments, the p-type semiconductor 32 represented by Chemical Formula 1 may be for example represented by Chemical Formula 1A.

In Chemical Formula 1A,

X may be O, S, Se, Te, SO, SO 2 , or SiR a R b ,

Ar may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of the foregoing two or more,

Ar 1a and Ar 2a may independently be a substituted or unsubstituted C6 to C30 aryl group or a substituted or unsubstituted C3 to C30 heteroaryl group,

Ar 1a and Ar 2a may independently be present or may be linked with each other to form a fused ring, and

R 1a to R 3a , R a , and R b may independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

In some example embodiments, in Chemical Formula 1A, Ar 1a and Ar 2a may independently be one of a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted benzotriazinyl group, a substituted or unsubstituted pyridopyrazinyl group, a substituted or unsubstituted pyridopyrimidinyl group, or a substituted or unsubstituted pyridopyridazinyl group.

In some example embodiments, Ar 1a and Ar 2a of Chemical Formula 1A may be linked with each other to form a ring or in some example embodiments, Ar 1a and Ar 2 a may be linked with each other by one of a single bond, —(CR g R h ) n2 — (n2 is 1 or 2), —O—, —S—, —Se—, —N═, —NR i —, —SiR j R k —, or —GeR l R m —. Herein, R g to R m may independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

In some example embodiments, the p-type semiconductor 32 represented by Chemical Formula 1 may be for example represented by Chemical Formula 1B or 1C.

In Chemical Formula 1B or 1C,

X 1 is Se, Te, O, S, SO, or SO 2 ,

Ar 3 may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of the foregoing two or more,

R 1 to R 3 may independently be one of hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, a cyano-containing group, or a combination thereof,

G may be one of a single bond, —O—, —S—, —Se—, —N═, —(CR f R g ) k —, —NR h —, —SiR i R j —, —GeR k R l —, —(C(R m )═C(R n ))—, or SnR o R p , wherein R f , R g , R h , R i , R j , R k , R l , R m , R n , R o , and R p may independently be one of hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkoxy group, or a substituted or unsubstituted C6 to C12 aryl group, R f and R g , R i and R j , R k and R l , R m and R n , and R o and R P may independently be present alone or may be linked with each other to provide a ring, and k may be 1 or 2,

Y 2 may be one of O, S, Se, Te, or C(R q )(CN) (wherein R q is one of hydrogen, a cyano group (—CN), or a C1 to C10 alkyl group),

R 6a to R 6d , R 7a to R 7d , R 16 , and R 17 may independently be one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, a cyano-containing group, or a combination thereof,

R 6a to R 6d may independently be present or adjacent two thereof may be linked with each other to form a fused ring, and

R 7a to R 7d may independently be present or adjacent two thereof may be linked with each other to form a fused ring.

In some example embodiments, Ar 3 of Chemical Formula 1B may be benzene, naphthylene, anthracene, thiophene, selenophene, tellurophene, pyridine, pyrimidine, or a fused ring of the foregoing two or more.

The n-type semiconductor 34 may be for example fullerene or a fullerene derivative, but is not limited thereto.

The active layer 30 may include an intrinsic layer (an I layer) wherein the p-type semiconductor 32 and the n-type semiconductor 34 are blended as a bulk heterojunction. Herein, the p-type semiconductor 32 and the n-type semiconductor 34 may be blended in a volume ratio of about 1:9 to about 9:1, for example about 2:8 to about 8:2, about 3:7 to about 7:3, about 4:6 to about 6:4, or about 5:5.

The active layer 30 may include a bi-layer including a p-type layer including the aforementioned p-type semiconductor 32 and an n-type layer including the aforementioned n-type semiconductor 34 . Herein, a thickness ratio of the p-type layer and the n-type layer may be about 1:9 to about 9:1, for example about 2:8 to about 8:2, about 3:7 to about 7:3, about 4:6 to about 6:4, or about 5:5.

›DETAILED DESCRIPTION · 4 of 18

The active layer 30 may further include a p-type layer and/or an n-type layer in addition to the intrinsic layer. The p-type layer may include the aforementioned p-type semiconductor 32 and the n-type layer may include the aforementioned n-type semiconductor 34 . In some example embodiments, they may be included in various combinations of p-type layer/I layer, I layer/n-type layer, p-type layer/I layer/n-type layer, and the like.

The auxiliary layer 40 may be a hole auxiliary layer between the anode 10 and the active layer 30 , and the hole auxiliary layer may include for example a hole transport layer, a hole injection layer, and/or an electron blocking layer. The auxiliary layer 40 may serve as a path for transporting the charge carriers (e.g., holes) separated from the active layer 30 to the anode 10 . Herein, the transporting direction of the charge carriers (e.g., holes) may be the active layer 30 , the auxiliary layer 40 , and the anode 10 .

The auxiliary layer 40 , in some example embodiments includes a plurality of layers, referred to herein as a plurality of auxiliary layers, where the plurality of auxiliary layers includes at least a first auxiliary layer 40 a and a second auxiliary layer 40 b . The first auxiliary layer 40 a may be disposed to be the closest to the active layer 30 , such that the first auxiliary layer 40 a may be understood to be proximate to the active layer 30 in relation to the second auxiliary layer 40 b and/or between the active layer 30 and the second auxiliary layer 40 b , and may be, in some example embodiments, in contact with the active layer 30 . The second auxiliary layer 40 b may be disposed to be the closest to anode 10 , such that the second auxiliary layer 40 b may be understood to be proximate to the anode 10 in relation to the first auxiliary layer 40 a and/or between the anode 10 and the first auxiliary layer 40 a , and may be, in some example embodiments, in contact with the anode 10 .

FIG. 2 is an energy diagram showing energy levels of the anode 10 , the auxiliary layer 40 , and the active layer 30 .

Referring to FIG. 2 , separated holes in the active layer 30 may be transported to the anode 10 along the HOMO energy level. In some example embodiments, the holes may be transported along a HOMO energy level (HOMO 30 ) of the active layer 30 , a HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , a HOMO energy level of the second auxiliary layer 40 b (HOMO 40b ), and an work function (WF 10 ) of the anode 10 .

Herein, the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 may become shallower sequentially from a vacuum level, in some example embodiments, the HOMO energy level (HOMO 30 ) of the active layer 30 may be the deepest, the work function (WF 10 ) of the anode 10 may be the shallowest, and the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a and the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b may be between the HOMO energy level (HOMO 30 ) of the active layer 30 and the work function (WF 10 ) of the anode 10 . As a result, the magnitude of the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a may be between the magnitude of the HOMO energy level (HOMO 30 ) of the active layer 30 and the magnitude of the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the magnitude of the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b may be between the magnitude of the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a and the magnitude of the work function (WF 10 ) of the anode 10 . In other words, the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 may have a cascading energy level.

In some example embodiments, the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 may have a stepwise shape.

A particular (or, alternatively, predetermined) energy barrier may be present between adjacent layers, and herein, the energy barrier may include an energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a , an energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 , and an energy barrier (Δϕ 3 ) between the first auxiliary layer 40 a and the second auxiliary layer 40 b . The energy barrier (Δϕ 1 ) may be a difference between the HOMO energy level (HOMO 30 ) of the active layer 30 and the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the energy barrier (Δϕ 2 ) may be a difference between the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b and the work function (WF 10 ) of the anode 10 , and the energy barrier (Δϕ 3 ) may be a difference between the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a and the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b.

A difference between the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) between adjacent layers may be very small and may be substantially equal.

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a and the energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equation 1.

|Δϕ 1 −Δϕ 2 |≤0.1 eV [Relationship Equation 2]

›DETAILED DESCRIPTION · 5 of 18

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a and the energy barrier (Δϕ 3 ) between the first auxiliary layer 40 a and the second auxiliary layer 40 b may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , and the second auxiliary layer 40 b may satisfy Relationship Equation 2.

|Δϕ 1 −Δϕ 3 |≤0.1 eV [Relationship Equation 2]

In some example embodiments, the energy barrier (Δϕ 3 ) between the first auxiliary layer 40 a and the second auxiliary layer 40 b and the energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equation 3.

|Δϕ 3 −Δϕ 2 |≤0.1 eV [Relationship Equation 3]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a , the energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 , and the energy barrier (Δϕ 3 ) between the first auxiliary layer 40 a and the second auxiliary layer 40 b may have a small difference and/or be substantially equal. In some example embodiments, energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may simultaneously satisfy Relationship Equations 1, 2, and 3.

Based on active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 satisfying one or more of Relationship Equations 1, 2, or 3, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) between the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 satisfy one or more of Relationship Equations 1, 2, or 3 and thus may prevent a hole transport delay at the interface of the layers present in a path through which holes transport and thereby, exhibit high charge extraction efficiency. In addition, charge carriers undesirably remaining at the interface between adjacent layers may be reduced or prevented to reduce or prevent an after-image due to the accumulated remaining charge carriers. Therefore, electrical performance of the device 100 , and/or a sensor, electronic device, or the like that includes the device 100 , may be improved.

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1A, 2A, and/or 3A.

0<|Δϕ 1 −Δϕ 2 |≤0.1 eV [Relationship Equation 1A]

0<|Δϕ 1 −Δϕ 3 |≤0.1 eV [Relationship Equation 2A]

0<|Δϕ 3 −Δϕ 2 |≤0.1 eV [Relationship Equation 3A]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1B, 2B, and/or 3B.

|Δϕ 1 −Δϕ 2 |≤0.07 eV [Relationship Equation 1B]

|Δϕ 1 −Δϕ 3 |≤0.07 eV [Relationship Equation 2B]

|Δϕ 3 −Δϕ 2 |≤0.07 eV [Relationship Equation 3B]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1C, 2C, and/or 3C.

0<|Δϕ 1 −Δϕ 2 |≤0.07 eV [Relationship Equation 1C]

0<|Δϕ 1 −Δϕ 3 |≤0.07 eV [Relationship Equation 2C]

0<|Δϕ 3 −Δϕ 2 |≤0.07 eV [Relationship Equation 3C]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1 D, 2D, and/or 3D.

|Δϕ 1 −Δϕ 2 |≤0.05 eV [Relationship Equation 1D]

|Δϕ 1 −Δϕ 3 |≤0.05 eV [Relationship Equation 2D]

|Δϕ 3 −Δϕ 2 |≤0.05 eV [Relationship Equation 3D]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1E, 2E, and/or 3E.

0<|Δϕ 1 −Δϕ 2 |≤0.05 eV [Relationship Equation 1E]

0<|Δϕ 1 −Δϕ 3 |≤0.05 eV [Relationship Equation 2E]

0<|Δϕ 3 −Δϕ 2 |≤0.05 eV [Relationship Equation 3E]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1F, 2F, and/or 3F.

|Δϕ 1 −Δϕ 2 |≤0.03 eV [Relationship Equation 1F]

|Δϕ 1 −Δϕ 3 |≤0.03 eV [Relationship Equation 2F]

|Δϕ 3 −Δϕ 2 |≤0.03 eV [Relationship Equation 3F]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1G, 2G, and/or 3G.

0<|Δϕ 1 −Δϕ 2 |≤0.03 eV [Relationship Equation 1G]

0<|Δϕ 1 −Δϕ 3 |≤0.03 eV [Relationship Equation 2G]

0<|Δϕ 3 −Δϕ 2 |≤0.03 eV [Relationship Equation 3G]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1H, 2H, and/or 3H.

|Δϕ 1 −Δϕ 2 |≤0.01 eV [Relationship Equation 1H]

|Δϕ 1 −Δϕ 3 |≤0.01 eV [Relationship Equation 2H]

|Δϕ 3 −Δϕ 2 |≤0.01 eV [Relationship Equation 3H]

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 1I, 2I and/or 3I.

0<|Δϕ 1 −Δϕ 2 |≤0.01 eV [Relationship Equation 1I]

0<|Δϕ 1 −Δϕ 3 |≤0.01 eV [Relationship Equation 2I]

0<|Δϕ 3 −Δϕ 2 |≤0.01 eV [Relationship Equation 3I]

In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) may be respectively (e.g., each of the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) may be) less than or equal to about 0.5 eV and within the range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) may be independently about 0.10 eV to about 0.25 eV and within the range, about 0.15 eV to about 0.25 eV, about 0.18 eV to about 0.25 eV, or about 0.20 eV to about 0.25 eV.

›DETAILED DESCRIPTION · 6 of 18

The first auxiliary layer 40 a and the second auxiliary layer 40 b may independently each have a thickness of less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

The first auxiliary layer 40 a and the second auxiliary layer 40 b may each include an organic material, an inorganic material, and/or an organic/inorganic material, respectively. In some example embodiments, at least one of the first auxiliary layer 40 a or the second auxiliary layer 40 b may include an organic material. In some example embodiments, the first auxiliary layer 40 a and the second auxiliary layer 40 b may each include an organic material.

In some example embodiments, the first auxiliary layer 40 a and the second auxiliary layer 40 b may each include a substituted or unsubstituted arylamine; a substituted or unsubstituted thiophene such as a substituted or unsubstituted oligothiophene and a substituted or unsubstituted polythiophene; a substituted or unsubstituted phenylene vinylene such as a substituted or unsubstituted oligophenylene vinylene and a substituted or unsubstituted polyphenylene vinylene; a substituted or unsubstituted quinacridone; a substituted or unsubstituted acene; a substituted or unsubstituted calcogene-containing fused compound; a substituted or unsubstituted squaraine; an oxide such as metal oxide and semi-metal oxide; or a combination thereof, within the range that satisfies the energy diagram described above.

In some example embodiments, the first auxiliary layer 40 a and the second auxiliary layer 40 b may each include 3,3′-bi[1,4]benzoxazino[2,3,4-kl]phenoxazine, Mes2B(p-4,4′-biphenyl-NPh(1-naphthyl), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 4,4′,4″-tris[phenyl(m-tolyl)amino]triphenylamine, N1,N1′-(biphenyl-4,4′-diyl)bis(N1-phenyl-N4,N4-di-m-tolylbenzene-1,4-diamine, 4,4′,4″-tris[2-naphthyl(phenyl)amino] triphenylamine, N,N′-diphenyl-N,N′-di-[4-(N,N-diphenyl-amino)phenyl]benzidine, 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene, 2,5-bis(4-biphenylyl)thiophene, 2,5-bis(4-biphenylyl)terthiophene, α-Sexithiophene, ω,ω′-dihexylterthiophene, ω,ω′-diocthylterthiophene, poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5]dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1,3-diyl]], poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3′″-di(2-octyldodecyl)-2,2′,5′,2″,5″,2′″-quaterthiophen-5,5′″-diyl)], poly(3-hexylthiophene-2,5-diyl), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], 4,4′-bis[4-(di-p-tolylamino)styryl]biphenyl, N,N′-dimethylquinacridone, 2,8-dimethylanthra[2,3-b:6,7-b′]dithiophene, benz[b]anthracene, tetracene, pentacene, poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5b′]dithiophene-2,6-diyl][2-(2-ethyl-1-oxohexyl)thieno[3,4-b]thiophenediyl]], poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}), 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine, 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]squaraine, molybdenum trioxide, copper(I) oxide, within the range that satisfies the energy diagram described above.

The electron buffer layer 50 may be disposed between the cathode 20 and the active layer 30 (e.g., between a second electrode and the active layer 30 ) and may transfer separated charge carriers (e.g., electrons) in the active layer 30 to the cathode 20 . Herein, a transporting direction of the charge carriers (e.g., electrons) may be the active layer 30 , the electron buffer layer 50 , and the cathode 20 . In some example embodiments, the electron buffer layer 50 may be in contact with the active layer 30 . In some example embodiments, one surface of the electron buffer layer 50 may be in contact with the active layer 30 and the other surface of the electron buffer layer 50 may be in contact with the cathode 20 .

The electron buffer layer 50 may include, in some example embodiments, an organic material, an inorganic material, and/or an organic/inorganic material. In some example embodiments, the electron buffer layer 50 may be a very thin film of several nanometers thickness, and may have, in some example embodiments, a thickness of less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, less than or equal to about 3 nm, or less than or equal to about 2 nm. The thickness of the electron buffer layer 50 may be, in some example embodiments, about 1 nm to about 8 nm, about 1 nm to about 7 nm, about 1 nm to about 5 nm, about 1 nm to about 3 nm, or about 1 nm to about 2 nm.

In some example embodiments, the electron buffer layer 50 may include an inorganic material, and may include an inorganic material having a lower work function than that of the cathode 20 . In some example embodiments, the work function of electron buffer layer 50 may be about 0.5 eV or more smaller than the work function of the cathode 20 . In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV and the work function of the electron buffer layer 50 may be less than or equal to about 4.0 eV. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV and the work function of the electron buffer layer 50 may be less than or equal to about 3.5 eV. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV and the work function of the electron buffer layer 50 may be less than or equal to about 3.0 eV. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV and the work function of the electron buffer layer 50 may be less than or equal to about 2.8 eV. In some example embodiments, the work function of the cathode 20 may be about 4.5 eV to about 5.0 eV and the work function of the electron buffer layer 50 may be, about 1.5 eV to about 4.0 eV, about 1.5 eV to about 3.5 eV, about 1.5 eV to about 3.0 eV, or about 1.5 eV to about 2.8 eV.

›DETAILED DESCRIPTION · 7 of 18

The electron buffer layer 50 may be made of (e.g., may at least partially comprise) a material that may be formed by thermal evaporation and simultaneously may satisfy the work function described above. In this way, the electron buffer layer 50 formed through the thermal evaporation may prevent thermal physical damage on the active layer 30 during formation of the electron buffer layer 50 and/or a subsequent process thereof and thus effectively prevent performance degradation of a device 100 , and/or a sensor, electronic device, or the like that includes the device 100 , due to the degradation of the active layer 30 .

Inorganic materials capable of satisfying these characteristics, and thus which the electron buffer layer 50 (including any layers included therein) may at least partially comprise, may include for example a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. The lanthanide element may include for example ytterbium (Yb).

The electron buffer layer 50 may be omitted.

The device 100 may further include an anti-reflective layer 90 on the anode 10 or the cathode 20 . The anti-reflective layer 90 is disposed at a light-incidence side to further improve light absorbance by lowering reflectance of incident light. In some example embodiments, when light is incident on the anode 10 , the anti-reflective layer 90 may be disposed at (e.g., in contact with) one surface of the anode 10 while when light is incident on the cathode 20 , the anti-reflective layer 90 may be disposed at (e.g., in contact with) one surface of the cathode 20 .

The anti-reflective layer 90 may include, for example a material having a refractive index of about 1.6 to about 2.5, and may include for example at least one of metal oxide, metal sulfide, or an organic material having a refractive index within the ranges. The anti-reflective layer 90 may include, for example a metal oxide such as aluminum-containing oxide, molybdenum-containing oxide, tungsten-containing oxide, vanadium-containing oxide, rhenium-containing oxide, niobium-containing oxide, tantalum-containing oxide, titanium-containing oxide, nickel-containing oxide, copper-containing oxide, cobalt-containing oxide, manganese-containing oxide, chromium-containing oxide, tellurium-containing oxide, or a combination thereof; metal sulfide such as zinc sulfide; or an organic material such as an amine derivative, but is not limited thereto.

The device 100 may be configured to generate an exciton internally when light is incident from the anode 10 or the cathode 20 and the active layer 30 is configured to absorb light of a particular (or, alternatively, predetermined) wavelength spectrum. The excitons may be separated into holes and electrons in the active layer 30 , and the separated holes may be transported to the anode 10 through the first auxiliary layer 40 a and the second auxiliary layer 40 b , while the separated electrons may be transported to the cathode 20 through the electron buffer layer 50 so as to flow a current.

FIG. 3 is a cross-sectional view showing a device according to some example embodiments.

Referring to FIG. 3 , like some example embodiments, including the example embodiments shown in FIGS. 1-2 , a device 100 according to some example embodiments includes an anode 10 and a cathode 20 facing each other; an active layer 30 between the anode 10 and the cathode 20 ; an auxiliary layer 40 between the anode 10 and the active layer 30 ; and an electron buffer layer 50 between the cathode 20 and the active layer 30 . Each constituent element is the same as described above.

However in some example embodiments including the example embodiments shown in FIGS. 3-4 , unlike some example embodiments, including the example embodiments shown in FIGS. 1-2 , the auxiliary layer 40 (e.g., the plurality of auxiliary layers that at least partially comprises the auxiliary layer 40 ) further includes a third auxiliary layer 40 c in addition to the first auxiliary layer 40 a and the second auxiliary layer 40 b . The third auxiliary layer 40 c may be between the first auxiliary layer 40 a and the second auxiliary layer 40 b , for example one surface of the third auxiliary layer 40 c may be in contact with the first auxiliary layer 40 a and the other surface of the third auxiliary layer 40 c may be in contact with the second auxiliary layer 40 b.

The first auxiliary layer 40 a , the third auxiliary layer 40 c , and the second auxiliary layer 40 b may have a sequentially stacked structure, so that a transporting direction of the separated charge carriers (e.g., holes) in the active layer 30 may be the active layer 30 , the first auxiliary layer 40 a , the third auxiliary layer 40 c , the second auxiliary layer 40 b , and the anode 10 .

FIG. 4 is an energy diagram showing energy levels of the anode 10 , the auxiliary layer 40 , and the active layer 30 in the device shown in FIG. 3 .

Referring to FIG. 4 , separated holes in the active layer 30 may be transported to the anode 10 along the HOMO energy level, in some example embodiments, along the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of a first auxiliary layer 40 a , the HOMO energy level (HOMO 40c ) of a third auxiliary layer 40 c , the HOMO energy level (HOMO 40b ) of a second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 .

Herein, the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c , the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 may become shallower sequentially, in some example embodiments, the HOMO energy level (HOMO 30 ) of the active layer 30 may be the deepest, the work function (WF 10 ) of the anode 10 may be the shallowest, and the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c , and the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b may be between the HOMO energy level (HOMO 30 ) of the active layer 30 and the work function (WF 10 ) of the anode 10 . As a result, the magnitude of the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a may be between the magnitude of the HOMO energy level (HOMO 30 ) of the active layer 30 and the magnitude of the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c , the magnitude of the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c may be between the magnitude of the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a and the magnitude of the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the magnitude of the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b may be between the magnitude of the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c and the magnitude of the work function (WF 10 ) of the anode 10 . In other words, the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c , the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 may have a cascading energy level.

›DETAILED DESCRIPTION · 8 of 18

In some example embodiments, the HOMO energy level (HOMO 30 ) of the active layer 30 , the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c , the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the work function (WF 10 ) of the anode 10 may have a stepwise shape.

In some example embodiments, a particular (or, alternatively, predetermined) energy barrier between the adjacent layers may be present, and herein, the energy barrier may include an energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a , an energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 , an energy barrier (Δϕ 4 ) between the third auxiliary layer 40 c and the second auxiliary layer 40 b , and an energy barrier (Δϕ 5 ) between the first auxiliary layer 40 a and the third auxiliary layer 40 c . The energy barrier (Δϕ 1 ) may be a difference between the HOMO energy level (HOMO 30 ) of the active layer 30 and the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , the energy barrier (Δϕ 2 ) may be a difference between the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b and the work function (WF 10 ) of the anode 10 , the energy barrier (Δϕ 4 ) may be a difference between the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c and the HOMO energy level (HOMO 40b ) of the second auxiliary layer 40 b , and the energy barrier (Δϕ 5 ) may be a difference between the HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a and the HOMO energy level (HOMO 40c ) of the third auxiliary layer 40 c.

Each energy barrier (Δϕ 1 , Δϕ 2 , Δϕ 4 , Δϕ 5 ) difference between adjacent layers may be very small and/or be substantially equal.

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a and the energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equation 1.

In some example embodiments, the energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 and the energy barrier (Δϕ 4 ) between the third auxiliary layer 40 c and the second auxiliary layer 40 b may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the third auxiliary layer 40 c , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equation 4.

|Δϕ 2 −Δϕ 4 |≤0.1 eV [Relationship Equation 4]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a and the energy barrier (Δϕ 5 ) between the first auxiliary layer 40 a and the third auxiliary layer 40 c may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , and the third auxiliary layer 40 c may satisfy Relationship Equation 5.

|Δϕ 1 −Δϕ 5 |≤0.1 eV [Relationship Equation 5]

In some example embodiments, the energy barrier (Δϕ 4 ) between the second auxiliary layer 40 b and the third auxiliary layer 40 c and the energy barrier (Δϕ 5 ) between the first auxiliary layer 40 a and the third auxiliary layer 40 c may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 40 a , third auxiliary layer 40 c and second auxiliary layer 40 b may satisfy Relationship Equation 6.

|Δϕ 4 −Δϕ 5 |≤0.1 eV [Relationship Equation 6]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 40 a , the energy barrier (Δϕ 2 ) between the second auxiliary layer 40 b and the anode 10 , the energy barrier (Δϕ 4 ) between the third auxiliary layer 40 c and the second auxiliary layer 40 b , and the energy barrier (Δϕ 5 ) between the first auxiliary layer 40 a and the third auxiliary layer 40 c may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the third auxiliary layer 40 c , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 4, 5, and 6 simultaneously.

Based on the active layer 30 , the first auxiliary layer 40 a , the third auxiliary layer 40 c , the second auxiliary layer 40 b , and the anode 10 satisfying one or more of Relationship Equations 4, 5, or 6, the energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 4 , Δϕ 5 ) between the active layer 30 , the first auxiliary layer 40 a , the third auxiliary layer 40 c , the second auxiliary layer 40 b , and the anode 10 satisfy one or more of Relationship Equations 4, 5, or 6 and thus may prevent a hole transport delay at the interface of the layers in a path through which holes transport and thereby exhibit high charge extraction efficiency. In addition, charge carriers undesirably remaining at the interface between adjacent layers may be reduced or prevented to reduce or prevent an after-image due to the accumulated remaining charge carriers. Therefore, electrical performance of the device 100 , and/or a sensor, electronic device, or the like that includes the device 100 , may be improved.

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 40 a , the third auxiliary layer 40 c , the second auxiliary layer 40 b , and the anode 10 may satisfy Relationship Equations 4A, 5A, and/or 6A.

0<|Δϕ 2 −Δϕ 4 |≤0.1 eV [Relationship Equation 4A]

0<|Δϕ 1 −Δϕ 5 |≤0.1 eV [Relationship Equation 5A]

0<|Δϕ 4 −Δϕ 5 |≤0.1 eV [Relationship Equation 6A]

›DETAILED DESCRIPTION · 9 of 18

|Δϕ 2 −Δϕ 4 |≤0.7 eV [Relationship Equation 4B]

|Δϕ 1 −Δϕ 5 |≤0.7 eV [Relationship Equation 5B]

|Δϕ 4 −Δϕ 5 |≤0.7 eV [Relationship Equation 6B]

0<|Δϕ 2 −Δϕ 4 |≤0.7 eV [Relationship Equation 4C]

0<|Δϕ 1 −Δϕ 5 |≤0.7 eV [Relationship Equation 5C]

0<|Δϕ 4 −Δϕ 5 |≤0.7 eV [Relationship Equation 6C]

|Δϕ 2 −Δϕ 4 |≤0.05 eV [Relationship Equation 4D]

|Δϕ 1 −Δϕ 5 |≤0.05 eV [Relationship Equation 5D]

|Δϕ 4 −Δϕ 5 |≤0.05 eV [Relationship Equation 6D]

0<|Δϕ 2 −Δϕ 4 |≤0.05 eV [Relationship Equation 4E]

0<|Δϕ 1 −Δϕ 5 |≤0.05 eV [Relationship Equation 5E]

0<|Δϕ 4 −Δϕ 5 |≤0.05 eV [Relationship Equation 6E]

|Δϕ 2 −Δϕ 4 |≤0.03 eV [Relationship Equation 4F]

|Δϕ 1 −Δϕ 5 |≤0.03 eV [Relationship Equation 5F]

|Δϕ 4 −Δϕ 5 |≤0.03 eV [Relationship Equation 6F]

0<|Δϕ 2 −Δϕ 4 |≤0.03 eV [Relationship Equation 4G]

0<|Δϕ 1 −Δϕ 5 |≤0.03 eV [Relationship Equation 5G]

0<|Δϕ 4 −Δϕ 5 |≤0.03 eV [Relationship Equation 6G]

|Δϕ 2 −Δϕ 4 |≤0.01 eV [Relationship Equation 4H]

|Δϕ 1 −Δϕ 5 |≤0.01 eV [Relationship Equation 5H]

|Δϕ 4 −Δϕ 5 |≤0.01 eV [Relationship Equation 6H]

0<|Δϕ 2 −Δϕ 4 |≤0.01 eV [Relationship Equation 4I]

0<|Δϕ 1 −Δϕ 5 |≤0.01 eV [Relationship Equation 5I]

0<|Δϕ 4 −Δϕ 5 |≤0.01 eV [Relationship Equation 6I]

In some example embodiments, the energy barriers (Δϕ 1 Δϕ 2 , Δϕ 4 , Δϕ 4 ) may be respectively (e.g., may each be) less than or equal to about 0.5 eV and within the range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (Δϕ 1 Δϕ 2 , Δϕ 4 , Δϕ 4 ) may be independently about 0.10 eV to about 0.25 eV and within the range, about 0.15 eV to about 0.25 eV, about 0.18 eV to about 0.25 eV, or about 0.20 eV to about 0.25 eV.

The first auxiliary layer 40 a , the second auxiliary layer 40 b , and the third auxiliary layer 40 c may independently have each thickness of less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

The first auxiliary layer 40 a , the second auxiliary layer 40 b , and the third auxiliary layer 40 c may include an organic material, an inorganic material, and/or an organic/inorganic material, respectively. In some example embodiments, at least one of the first auxiliary layer 40 a , the second auxiliary layer 40 b , or the third auxiliary layer 40 c may include an organic material. In some example embodiments, the first auxiliary layer 40 a , the second auxiliary layer 40 b , and the third auxiliary layer 40 c may each include an organic material.

FIG. 5 is a cross-sectional view showing a device according to some example embodiments.

Referring to FIG. 5 , like some example embodiments, including the example embodiments shown in FIGS. 1-2 , a device 100 includes an anode 10 and a cathode 20 facing each other; an active layer 30 between the anode 10 and the cathode 20 ; an auxiliary layer 40 between the anode 10 and the active layer 30 and including a first auxiliary layer 40 a and a second auxiliary layer 40 b ; and an electron buffer layer 50 between the cathode 20 and the active layer 30 . Each constituent element is the same as described above.

However in some example embodiments including the example embodiments shown in FIGS. 5-6 , unlike some example embodiments, including the example embodiments shown in FIGS. 1-2 , the electron buffer layer 50 includes a first electron buffer layer 50 a and a second electron buffer layer 50 b . The first electron buffer layer 50 a may be disposed closest to the active layer 30 , such that the first electron buffer layer 50 a may be understood to be proximate to the active layer 30 in relation to the second electron buffer layer 50 b and/or between the active layer 30 and the second electron buffer layer 50 b and may be, in some example embodiments, in contact with the active layer 30 . The second electron buffer layer 50 b may be disposed closest to the cathode 20 , such that the second electron buffer layer 50 b may be understood to be proximate to the cathode 20 in relation to the first electron buffer layer 50 a and/or between the cathode 20 and the first electron buffer layer 50 a and may be, in some example embodiments, in contact with the cathode 20 .

FIG. 6 is an energy diagram showing energy levels of elements of the device of FIG. 5 .

›DETAILED DESCRIPTION · 10 of 18

Separated Holes in the active layer 30 may be transported to the anode 10 along the HOMO energy level. In some example embodiments, the holes may be transported along a HOMO energy level (HOMO 30 ) of the active layer 30 , a HOMO energy level (HOMO 40a ) of the first auxiliary layer 40 a , a HOMO energy level of the second auxiliary layer 40 b (HOMO 40b ), and a work function (WF 10 ) of the anode 10 . Specific description is the same as described above.

Separated electrons in the active layer 30 may be transported to the cathode 20 along a LUMO energy level. In some example embodiments, the electrons may be transported along a LUMO energy level (LUMO 30 ) of the active layer 30 , a LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a , a LUMO energy level of (LUMO 50b ) of the second electron buffer layer 50 b , and a work function (WF 20 ) of the cathode 20 . In some example embodiments, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a , the LUMO energy level (LUMO 50b ) of the second electron buffer layer 50 b , and the work function (WF 20 ) of the cathode 20 may have a stepwise shape, such that, in some example embodiments, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a , a LUMO energy level of (LUMO 50b ) of the second electron buffer layer 50 b , and the work function (WF 20 ) of the cathode 20 may become deeper sequentially, such that the magnitude of the LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a is between the magnitude of the LUMO energy level (LUMO 30 ) of the active layer 30 and the magnitude of the LUMO energy level of (LUMO 50b ) of the second electron buffer layer 50 b , and the magnitude of the LUMO energy level of (LUMO 50b ) of the second electron buffer layer 50 b is between the magnitude of the LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a and the magnitude of the work function (WF 20 ) of the cathode 20 .

A particular (or, alternatively, predetermined) energy barrier may be present between the adjacent layers, and herein, the energy barrier may include an energy barrier (Δϕ 6 ) between the active layer 30 and the first electron buffer layer 50 a , an energy barrier (Δϕ 7 ) between the second electron buffer layer 50 b and the cathode 20 and an energy barrier (Δϕ 8 ) between the first electron buffer layer 50 a and the second electron buffer layer 50 b . The energy barrier (Δϕ 6 ) may be a difference between the LUMO energy level (LUMO 30 ) of the active layer 30 and the LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a , the energy barrier (Δϕ 7 ) may be a difference between the LUMO energy level (LUMO 50b ) of the second electron buffer layer 50 b and the work function (WF 20 ) of the cathode 20 , and the energy barrier (Δϕ 8 ) may be a difference between the LUMO energy level (LUMO 50a ) of the first electron buffer layer 50 a and the LUMO energy level (LUMO 50b ) of the second electron buffer layer 50 b.

Each energy barrier (Δϕ 6 , Δϕ 7 , Δϕ 8 ) between the adjacent layers may have a small difference and/or be substantially equal.

In some example embodiments, the energy barrier (Δϕ 6 ) between the active layer 30 and the first electron buffer layer 50 a and the energy barrier (Δϕ 7 ) between the second electron buffer layer 50 b and the cathode 20 may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first electron buffer layer 50 a , the second electron buffer layer 50 b , and the cathode 20 may satisfy Relationship Equation 7.

|Δϕ 6 −Δϕ 7 |≤0.1 eV [Relationship Equation 7]

In some example embodiments, the energy barrier (Δϕ 6 ) between the active layer 30 and the first electron buffer layer 50 a and the energy barrier (Δϕ 8 ) between the first electron buffer layer 50 a and the second electron buffer layer 50 b may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first electron buffer layer 50 a , and the second electron buffer layer 50 b may satisfy Relationship Equation 8.

|Δϕ 6 −Δϕ 8 |≤0.1 eV [Relationship Equation 8]

In some example embodiments, the energy barrier (Δϕ 8 ) between the first electron buffer layer 50 a and the second electron buffer layer 50 b and the energy barrier (Δϕ 7 ) between the second electron buffer layer 50 b and the cathode 20 may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the first electron buffer layer 50 a , the second electron buffer layer 50 b , and the cathode 20 may satisfy Relationship Equation 9.

|Δϕ 7 −Δϕ 8 |≤0.1 eV [Relationship Equation 9]

In some example embodiments, the energy barrier (Δϕ 6 ) between the active layer 30 and the first electron buffer layer 50 a , the energy barrier (Δϕ 7 ) between the second electron buffer layer 50 b and the cathode 20 , and the energy barrier (Δϕ 8 ) between the first electron buffer layer 50 a and the second electron buffer layer 50 b may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first electron buffer layer 50 a , the second electron buffer layer 50 b , and the cathode 20 may satisfy Relationship Equations 7, 8, and 9 simultaneously.

Based on the anode 10 , the first and second auxiliary layers 40 a and 40 b , the active layer 30 , the first and second electron buffer layers 50 a and 50 b , and the cathode 20 satisfying one or more of Relationship Equations 7, 8, or 9, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) between the anode 10 , the first and second auxiliary layers 40 a and 40 b , and the active layer 30 and the energy barriers (Δϕ 6 , Δϕ 7 , and Δϕ 8 ) between the active layer 30 , the first and second electron buffer layers 50 a and 50 b , and the cathode 20 may satisfy one or more of Relationship Equations 7, 8, or 9 and thus may prevent a hole transport delay at the interface of the layers in a path through which holes transport and simultaneously, an electron transport delay at the interface of the layers in a path through which electrons transport and accordingly, exhibit much higher charge extraction efficiency. In addition, undesirably remaining charge carriers at the interface between the adjacent layers may be reduced or prevented to further reduce or prevent an after-image due to the accumulated remaining charge carriers. Therefore, electrical performance of the device 100 , and/or a sensor, electronic device, or the like that includes the device 100 , may be further improved.

›DETAILED DESCRIPTION · 11 of 18

In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 3 , Δϕ 6 , Δϕ 7 , Δϕ 8 ) may be respectively (e.g., may each be) less than or equal to about 0.5 eV and within the range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 3 , Δϕ 6 , Δϕ 7 , Δϕ 8 ) may be independently about 0.10 eV to about 0.25 eV and within the range, about 0.15 eV to about 0.25 eV, about 0.18 eV to about 0.25 eV, or about 0.20 eV to about 0.25 eV.

The first electron buffer layer 50 a and the second electron buffer layer 50 b may independently have each thickness of less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

The first electron buffer layer 50 a and the second electron buffer layer 50 b may include an organic material, an inorganic material, and/or an organic/inorganic material, respectively. In some example embodiments, at least one of the first electron buffer layer 50 a or the second electron buffer layer 50 b may include an organic material. In some example embodiments, the first electron buffer layer 50 a and the second electron buffer layer 50 b may each include an organic material.

FIG. 7 is a cross-sectional view showing a device according to some example embodiments.

Referring to FIG. 7 , a device 100 includes an anode 10 , a cathode 20 , an active layer 30 , an auxiliary layer 60 , and a hole buffer layer 70 .

The anode 10 , the cathode 20 , and the active layer 30 are the same as described above.

The auxiliary layer 60 may be an electron auxiliary layer between the cathode 20 and the active layer 30 , and the electron auxiliary layer may include, in some example embodiments, an electron transport layer, an electron injection layer, and/or a hole blocking layer. The auxiliary layer 60 may serve as a passage for transporting separated charge carriers (e.g., electrons) from the active layer 30 to the cathode 20 . Herein, a transporting direction of the charge carriers (e.g., electrons) may be the active layer 30 , the auxiliary layer 60 , and the cathode 20 .

The auxiliary layer 60 includes a plurality of layers and includes a first auxiliary layer 60 a and a second auxiliary layer 60 b . The first auxiliary layer 60 a may be closest to the active layer 30 and may be, in some example embodiments, in contact with the active layer 30 . The second auxiliary layer 60 b may be closest to the cathode 20 and may be, in some example embodiments, in contact with the cathode 20 .

FIG. 8 is an energy diagram showing energy levels of the cathode 20 , the auxiliary layer 60 , and the active layer 30 in the device shown in FIG. 7 ,

Referring to FIG. 8 , separated electrons in the active layer 30 may be transported along the LUMO energy level to the cathode 20 , in some example embodiments, along the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 .

Herein, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 may become deeper sequentially from a vacuum level, in some example embodiments, the LUMO energy level (LUMO 30 ) of the active layer 30 may be the shallowest, the work function (WF 20 ) of the cathode 20 may be the deepest, the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a and the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b may be between the LUMO energy level (LUMO 30 ) of the active layer 30 and the work function (WF 20 ) of the cathode 20 . As a result, the magnitude of the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a may be between the magnitude of the LUMO energy level (LUMO 30 ) of the active layer 30 and the magnitude of the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the magnitude of the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b may be between the magnitude of the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a and the magnitude of the work function (WF 20 ) of the cathode 20 . In other words, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 may have a cascading energy level.

In some example embodiments, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 may have a stepwise shape.

A particular (or, alternatively, predetermined) energy barrier may be present between adjacent layers, and herein, the energy barrier may include an energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a , an energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 , and an energy barrier (Δϕ 3 ) between the first auxiliary layer 60 a and the second auxiliary layer 60 b . The energy barrier (Δϕ 1 ) may be a difference between the LUMO energy level (LUMO 30 ) of the active layer 30 and the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the energy barrier (Δϕ 2 ) may be a difference between the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b and the work function (WF 20 ) of the cathode 20 , and the energy barrier (Δϕ 3 ) may be a difference between the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a and the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b.

›DETAILED DESCRIPTION · 12 of 18

Each energy barrier (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) between the adjacent layers may have a small difference and/or be substantially equal.

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a and the energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , the second auxiliary layer 60 b and the cathode 20 may satisfy Relationship Equation 1.

|Δϕ 1 −Δϕ 2 |≤0.1 eV [Relationship Equation 1]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a and the energy barrier (Δϕ 3 ) between the first auxiliary layer 60 a and the second auxiliary layer 60 b may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , and the second auxiliary layer 60 b may satisfy Relationship Equation 2.

|Δϕ 1 −Δϕ 3 |≤0.1 eV [Relationship Equation 2]

In some example embodiments, the energy barrier (Δϕ 3 ) between the first auxiliary layer 60 a and the second auxiliary layer 60 b and the energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the cathode 20 may satisfy Relationship Equation 3.

|Δϕ 3 −Δϕ 2 |≤0.1 eV [Relationship Equation 3]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a , the energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 , and the energy barrier (Δϕ 3 ) between the first auxiliary layer 60 a and the second auxiliary layer 60 b may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the cathode 20 may satisfy Relationship Equations 1, 2, and 3 simultaneously.

Based on the active layer 30 , the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the cathode 20 satisfying one or more of Relationship Equations 1, 2, or 3, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) between the active layer 30 , the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the cathode 20 may satisfy one or more of Relationship Equations 1, 2, or 3 and thus prevent an electron transport delay at the interface of the layers in a path through which electrons transport and thereby exhibit high charge extraction efficiency. In addition, undesirably remaining charge carriers at the interface between the adjacent layers may be reduced or prevented to reduce or prevent an after-image due to the accumulated remaining charge carriers. Therefore, electrical performance of the device 100 , and/or a sensor, electronic device, or the like that includes the device 100 , may be improved.

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the cathode 20 may satisfy Relationship Equations 1A, 2A, and/or 3A.

0<|Δϕ 1 −Δϕ 2 |≤0.1 eV [Relationship Equation 1A]

0<|Δϕ 1 −Δϕ 3 |≤0.1 eV [Relationship Equation 1A]

0<|Δϕ 3 −Δϕ 2 |≤0.1 eV [Relationship Equation 1A]

|Δϕ 1 −Δϕ 2 |≤0.07 eV [Relationship Equation 1B]

|Δϕ 1 −Δϕ 3 |≤0.07 eV [Relationship Equation 2B]

|Δϕ 3 −Δϕ 2 |≤0.07 eV [Relationship Equation 3B]

0<|Δϕ 1 −Δϕ 2 |≤0.07 eV [Relationship Equation 1C]

0<|Δϕ 1 −Δϕ 3 |≤0.07 eV [Relationship Equation 2C]

0<|Δϕ 3 −Δϕ 2 |≤0.07 eV [Relationship Equation 3C]

|Δϕ 1 −Δϕ 2 |≤0.05 eV [Relationship Equation 1D]

|Δϕ 1 −Δϕ 3 |≤0.05 eV [Relationship Equation 2D]

|Δϕ 3 −Δϕ 2 |≤0.05 eV [Relationship Equation 3D]

0<|Δϕ 1 −Δϕ 2 |≤0.05 eV [Relationship Equation 1E]

0<|Δϕ 1 −Δϕ 3 |≤0.05 eV [Relationship Equation 2E]

0<|Δϕ 3 −Δϕ 2 |≤0.05 eV [Relationship Equation 3E]

|Δϕ 1 −Δϕ 2 |≤0.03 eV [Relationship Equation 1F]

|Δϕ 1 −Δϕ 3 |≤0.03 eV [Relationship Equation 2F]

|Δϕ 3 −Δϕ 2 |≤0.03 eV [Relationship Equation 3F]

0<|Δϕ 1 −Δϕ 2 |≤0.03 eV [Relationship Equation 1G]

0<|Δϕ 1 −Δϕ 3 |≤0.03 eV [Relationship Equation 2G]

0<|Δϕ 3 −Δϕ 2 |≤0.03 eV [Relationship Equation 3G]

|Δϕ 1 −Δϕ 2 |≤0.01 eV [Relationship Equation 1H]

|Δϕ 1 −Δϕ 3 |≤0.01 eV [Relationship Equation 2H]

|Δϕ 3 −Δϕ 2 |≤0.01 eV [Relationship Equation 3H]

›DETAILED DESCRIPTION · 13 of 18

0<|Δϕ 1 −Δϕ 2 |≤0.01 eV [Relationship Equation 1I]

0<|Δϕ 1 −Δϕ 3 |≤0.01 eV [Relationship Equation 2I]

0<|Δϕ 3 −Δϕ 2 |≤0.01 eV [Relationship Equation 3I]

In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) may be each less than or equal to about 0.5 eV and within the range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , and Δϕ 3 ) may be independently about 0.105 eV to about 0.25 eV and within the range, about 0.15 eV to about 0.25 eV, about 0.18 eV to about 0.25 eV, or about 0.20 eV to about 0.25 eV.

The first auxiliary layer 60 a and the second auxiliary layer 60 b may independently have each thickness of less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

The first auxiliary layer 60 a and the second auxiliary layer 60 b may include an organic material, an inorganic material, and/or an organic/inorganic material, respectively. In some example embodiments, at least one of the first auxiliary layer 60 a or the second auxiliary layer 60 b may include an organic material. In some example embodiments, the first auxiliary layer 60 a and the second auxiliary layer 60 b may each include an organic material.

The hole buffer layer 70 is between the anode 10 and the active layer 30 and may transport separated charge carriers (e.g., holes) in the active layer 30 to the anode 10 . Herein, a transporting direction of the charge carriers (e.g., holes) may be the active layer 30 , the hole buffer layer 70 , and the anode 10 . In some example embodiments, the hole buffer layer 70 may be in contact with the active layer 30 . In some example embodiments, one surface of the hole buffer layer 70 may be in contact with the active layer 30 and the other surface of the hole buffer layer 70 may be in contact with the anode 10 .

The hole buffer layer 70 may be a very thin film of several nanometers thickness, and may have, in some example embodiments, a thickness of less than or equal to about 8 nm, less than or equal to about 7 nm, or less than or equal to about 5 nm. The hole buffer layer 70 may have, in some example embodiments, a thickness of about 1 nm to about 8 nm, about 1 nm to about 7 nm, or about 1 nm to about 5 nm.

The hole buffer layer 70 may include, in some example embodiments, an organic material, an inorganic material, and/or an organic/inorganic material.

In some example embodiments, the hole buffer layer 70 may include an organic material.

In some example embodiments, the hole buffer layer 70 may include, in some example embodiments, a compound represented by Chemical Formula 4A or 4B, but is not limited thereto.

In Chemical Formula 4A or 4B,

M 1 and M 2 are independently CR n R o , SiR p R q , NR r O, S, Se, or Te,

Ar 1b , Ar 2b , Ar 3b , and Ar 4b are independently a substituted or unsubstituted C6 to C30 aryl group or a substituted or unsubstituted C3 to C30 heteroaryl group,

G 2 and G 3 are independently a single bond, —(CR s R t ) n3 —, —O—, —S—, —Se—, —N═, —NR u —, —SiR v R w —, or —GeR x R y —, wherein n3 is 1 or 2, and

R 30 to R 37 and R n to R y are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

In some example embodiments, the hole buffer layer 70 may be a compound represented by Chemical Formula 4A-1 or 4B-1, but is not limited thereto.

In Chemical Formula 4A-1 or 4B-1,

M 1 , M 2 , G 2 , G 3 , and R 30 to R 37 are the same as described above, and

R 38 to R 45 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

In some example embodiments, the hole buffer layer 70 may be a compound represented by Chemical Formula 4A-1a or 4B-1a, but is not limited thereto.

In Chemical Formula 4A-1a or 4B-1a, R 38 to R 45 , R o , and R n are the same as described above.

In FIG. 7 , the hole buffer layer 70 is shown as a single layer but is not limited thereto and includes at least two layers. In some example embodiments, the hole buffer layer 70 may include a first hole buffer layer (not shown) and a second hole buffer layer (not shown), and in some example embodiments, the first hole buffer layer may be formed to be close to the active layer 30 , in some example embodiments, to be in contact with the active layer 30 , and the second hole buffer layer may be formed to be the closest to the anode 10 , in some example embodiments, to be in contact with the anode 10 . In some example embodiments, energy level differences between the active layer 30 , the first hole buffer layer, the second hole buffer layer, and the anode may be very small and/or be substantially equal. In some example embodiments, the HOMO energy level difference between the active layer 30 , the first hole buffer layer, the second hole buffer layer, and the anode 10 may satisfy Relationship Equations 7, 8, and/or 9 like the LUMO energy level differences between the active layer 30 , the first electron buffer layer 50 a , the second electron buffer layer 50 b , and the cathode 20 as shown in FIGS. 5 and 6 .

In some example embodiments, the hole buffer layer 70 may be omitted.

The device 100 may further include an anti-reflective layer (not shown) on the anode 10 or the cathode 20 . The anti-reflective layer is the same as described above.

›DETAILED DESCRIPTION · 14 of 18

The device 100 may internally generate excitons, when light is incident through the anode 10 or the cathode 20 and the active layer 30 may be configured to absorb light of a particular (or, alternatively, predetermined) wavelength spectrum. The excitons may be separated into electrons and holes in the active layer 30 , and the separated electrons may be transported to the cathode 20 through the first auxiliary layer 60 a and the second auxiliary layer 60 b , while the separated holes may be transported to the anode 10 through the hole buffer layer 70 , so as to flow a current.

FIG. 9 is a cross-sectional view showing a device according to some example embodiments.

Referring to FIG. 9 , the device 100 includes, like some example embodiments, including the example embodiments shown in FIGS. 1-2 , the anode 10 and the cathode 20 facing each other; the active layer 30 between the anode 10 and the cathode 20 ; the auxiliary layer 60 between the cathode 20 and the active layer 30 ; and the hole buffer layer 70 between the anode 10 and the active layer 30 . Each constituent element is the same as described above.

However in some example embodiments including the example embodiments shown in FIGS. 9-10 , unlike some example embodiments, including the example embodiments shown in FIGS. 1-2 , the auxiliary layer 60 may further include a third auxiliary layer 60 c , in addition to the first auxiliary layer 60 a and the second auxiliary layer 60 b . The third auxiliary layer 60 c may be between the first auxiliary layer 60 a and the second auxiliary layer 60 b , in some example embodiments, one surface of the third auxiliary layer 60 c may be in contact with the first auxiliary layer 60 a , and the other surface of the third auxiliary layer 60 c may be in contact with the second auxiliary layer 60 b.

The auxiliary layer 60 may have a structure of sequentially stacking the first auxiliary layer 60 a , the third auxiliary layer 60 c , and the second auxiliary layer 60 b , and accordingly, a transporting direction of separated charge carriers (e.g., electrons) in the active layer 30 is the active layer 30 , the first auxiliary layer 60 a , the third auxiliary layer 60 c , the second auxiliary layer 60 b , and the cathode 20 .

FIG. 10 is an energy diagram showing energy levels of the cathode 20 , the auxiliary layer 60 , and the active layer 30 in the device of FIG. 9 .

Referring to FIG. 10 , separated electrons in the active layer 30 may be transferred along the LUMO energy level to the cathode 20 , in some example embodiments, along the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c , the LUMO energy level (HOMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 .

Herein, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 may become deeper sequentially, in some example embodiments, the LUMO energy level (LUMO 30 ) of the active layer 30 may be the shallowest, the work function (WF 20 ) of the cathode 20 may be the deepest, and the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c , and the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b may be present between the LUMO energy level (LUMO 30 ) of the active layer 30 and the work function (WF 20 ) of the cathode 20 . In other words, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 may have a cascading energy level.

In some example embodiments, the LUMO energy level (LUMO 30 ) of the active layer 30 , the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c , the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the work function (WF 20 ) of the cathode 20 may have a stepwise shape.

In some example embodiments, a particular (or, alternatively, predetermined) energy barrier may be present between the adjacent layers, and herein, the energy barriers may include an energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a , an energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 , an energy barrier (Δϕ 4 ) between the third auxiliary layer 60 c and the second auxiliary layer 60 b , and an energy barrier (Δϕ 5 ) between the first auxiliary layer 60 a and the third auxiliary layer 60 c . The energy barrier (Δϕ 1 ) may be a difference between the LUMO energy level (LUMO 30 ) of the active layer 30 and the LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a , the energy barrier (Δϕ 2 ) may be a difference between the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b and the work function (WF 20 ) of the cathode 20 , the energy barrier (Δϕ 4 ) may be a difference between the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c and the LUMO energy level (LUMO 60b ) of the second auxiliary layer 60 b , and the energy barrier (Δϕ 5 ) may be a difference between LUMO energy level (LUMO 60a ) of the first auxiliary layer 60 a and the LUMO energy level (HOMO 60c ) of the third auxiliary layer 60 c.

The energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 4 , and Δϕ 5 ) between the adjacent layers may have a very small difference and/or be substantially equal.

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a and the energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the cathode 20 may satisfy Relationship Equation 1.

›DETAILED DESCRIPTION · 15 of 18

In some example embodiments, the energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 and the energy barrier (Δϕ 4 ) between the third auxiliary layer 60 c and the second auxiliary layer 60 b may have a very small difference and/or be substantially, be equal. In some example embodiments, the energy diagrams of the third auxiliary layer 60 c , the second auxiliary layer 60 b , and the cathode 20 may satisfy Relationship Equation 4.

|Δϕ 2 −Δϕ 4 |≤0.1 eV [Relationship Equation 4]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a and the energy barrier (Δϕ 5 ) between the first auxiliary layer 60 a and the third auxiliary layer 60 c may have a small difference and/or be substantially, be equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , and the third auxiliary layer 60 c may satisfy Relationship Equation 5.

|Δϕ 1 −Δϕ 5 |≤0.1 eV [Relationship Equation 5]

In some example embodiments, the energy barrier (Δϕ 4 ) between the second auxiliary layer 60 b and the third auxiliary layer 60 c and the energy barrier (Δϕ 5 ) between the first auxiliary layer 60 a and the third auxiliary layer 60 c may have a small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 60 a , the third auxiliary layer 60 c , and the second auxiliary layer 60 b may satisfy Relationship Equation 6.

|Δϕ 4 −Δϕ 5 |≤0.1 eV [Relationship Equation 6]

In some example embodiments, the energy barrier (Δϕ 1 ) between the active layer 30 and the first auxiliary layer 60 a , the energy barrier (Δϕ 2 ) between the second auxiliary layer 60 b and the cathode 20 , the energy barrier (Δϕ 4 ) between the third auxiliary layer 60 c and the second auxiliary layer 60 b , and the energy barrier (Δϕ 5 ) between the first auxiliary layer 60 a and the third auxiliary layer 60 c may have a very small difference and/or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , the third auxiliary layer 60 c , the second auxiliary layer 60 b , and the cathode 20 may simultaneously satisfy Relationship Equations 4, 5, and 6.

Based on the active layer 30 , the first auxiliary layer 60 a , the third auxiliary layer 60 c , the second auxiliary layer 60 b , and the cathode 20 satisfying one or more of Relationship Equations 4, 5, or 6, the energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 4 , and Δϕ 5 ) of the active layer 30 , the first auxiliary layer 60 a , the third auxiliary layer 60 c , the second auxiliary layer 60 b , and the cathode 20 may satisfy one or more of Relationship Equations 4, 5, or 6 and accordingly, may prevent a hole transport delay at the interface of the layers present in a path through which electrons transport and thus exhibit high charge extraction efficiency. In addition, undesirably remaining charge carriers remaining at the interface between the adjacent layers may be reduced or prevented to reduce or prevent an after-image d due to the accumulated remaining charge carriers. Therefore, electrical performance of the device 100 , and/or a sensor, electronic device, or the like that includes the device 100 , may be improved.

Within the range, the energy diagrams of the active layer 30 , the first auxiliary layer 60 a , the third auxiliary layer 60 c , the second auxiliary layer 60 b , and the cathode 20 may satisfy Relationship Equations 4A, 5A, and/or 6A.

0<|Δϕ 2 −Δϕ 4 |≤0.1 eV [Relationship Equation 4A]

0<|Δϕ 1 −Δϕ 5 |≤0.1 eV [Relationship Equation 5A]

0<|Δϕ 4 −Δϕ 5 |≤0.1 eV [Relationship Equation 6A]

|Δϕ 2 −Δϕ 4 |≤0.7 eV [Relationship Equation 4B]

|Δϕ 1 −Δϕ 5 |≤0.7 eV [Relationship Equation 5B]

|Δϕ 4 −Δϕ 5 |≤0.7 eV [Relationship Equation 6B]

0<|Δϕ 2 −Δϕ 4 |≤0.7 eV [Relationship Equation 4C]

0<|Δϕ 1 −Δϕ 5 |≤0.7 eV [Relationship Equation 5C]

0<|Δϕ 4 −Δϕ 5 |≤0.7 eV [Relationship Equation 6C]

|Δϕ 2 −Δϕ 4 |≤0.05 eV [Relationship Equation 4D]

|Δϕ 1 −Δϕ 5 |≤0.05 eV [Relationship Equation 5D]

|Δϕ 4 −Δϕ 5 |≤0.05 eV [Relationship Equation 6D]

0<|Δϕ 2 −Δϕ 4 |≤0.05 eV [Relationship Equation 4E]

0<|Δϕ 1 −Δϕ 5 |≤0.05 eV [Relationship Equation 5E]

0<|Δϕ 4 −Δϕ 5 |≤0.05 eV [Relationship Equation 6E]

|Δϕ 2 −Δϕ 4 |≤0.03 eV [Relationship Equation 4F]

|Δϕ 1 −Δϕ 5 |≤0.03 eV [Relationship Equation 5F]

|Δϕ 4 −Δϕ 5 |≤0.03 eV [Relationship Equation 6F]

0<|Δϕ 2 −Δϕ 4 |≤0.03 eV [Relationship Equation 4G]

0<|Δϕ 1 −Δϕ 5 |≤0.03 eV [Relationship Equation 5G]

0<|Δϕ 4 −Δϕ 5 |≤0.03 eV [Relationship Equation 6G]

›DETAILED DESCRIPTION · 16 of 18

|Δϕ 2 −Δϕ 4 |≤0.01 eV [Relationship Equation 4H]

|Δϕ 1 −Δϕ 5 |≤0.01 eV [Relationship Equation 5H]

|Δϕ 4 −Δϕ 5 |≤0.01 eV [Relationship Equation 6H]

0<|Δϕ 2 −Δϕ 4 |≤0.01 eV [Relationship Equation 4I]

0<|Δϕ 1 −Δϕ 5 |≤0.01 eV [Relationship Equation 5I]

0<|Δϕ 4 −Δϕ 5 |≤0.01 eV [Relationship Equation 6I]

In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 4 , and Δϕ 5 ) may be respectively less than or equal to about 0.5 eV and within the range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (Δϕ 1 , Δϕ 2 , Δϕ 4 , and Δϕ 5 ) may be independently in a range of about 0.10 eV to about 0.25 eV and within the range, about 0.15 eV to about 0.25 eV, about 0.18 eV to about 0.25 eV, or about 0.20 eV to about 0.25 eV.

The first auxiliary layer 60 a , the second auxiliary layer 60 b , and the third auxiliary layer 60 c may independently have each thickness of less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

The first auxiliary layer 60 a , the second auxiliary layer 60 b , and the third auxiliary layer 60 c may include an organic material, an inorganic material, and/or an organic/inorganic material, respectively. In some example embodiments, at least one of the first auxiliary layer 60 a , the second auxiliary layer 60 b , or the third auxiliary layer 60 c may include an organic material. In some example embodiments, the first auxiliary layer 60 a , the second auxiliary layer 60 b , and the third auxiliary layer 60 c may each include an organic material.

The aforementioned device 100 may be applied to various electronic devices, including, for example, solar cells, light emitting devices, sensors, photodetectors, and/or photo-sensors, but is not limited thereto.

In some example embodiments, the device 100 may be applied to (e.g., included in) one or more sensors and the one or more sensors may be for example image sensors.

Hereinafter, an example of an image sensor to which the aforementioned device 100 is applied is described with reference to drawings. Herein, an organic CMOS image sensor is described as an example of the image sensor.

FIG. 11 is a schematic cross-sectional view of an example of an image sensor according to some example embodiments.

Referring to FIG. 11 , an image sensor 300 according to some example embodiments includes a semiconductor substrate 110 , an insulation layer 80 , a device 100 , and a color filter layer 170 .

The semiconductor substrate 110 may be a silicon substrate, and is integrated with the transmission transistor (not shown) and the charge storage 155 . The transmission transistor and/or charge storage 155 may be integrated for each pixel. The charge storage 155 is electrically connected to the device 100 .

The insulation layer 80 is formed on the metal wire and the pad. The insulation layer 80 may be made of an inorganic insulating material such as a silicon oxide and/or a silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The insulation layer 80 has a trench 85 exposing the charge storage 155 . The trench 85 may be filled with fillers.

The aforementioned device 100 is formed on the insulation layer 80 . The device 100 may be one of the devices 100 shown in FIG. 1, 3, 5, 7 , or 9 . The device 100 may be a photoelectric conversion device. The specific description thereof is the same as described above. The anode 10 or cathode 20 of the device 100 may be connected to the charge storage 155 .

The color filter layer 170 is formed on the device 100 . The color filter layer 170 includes a blue filter 170 a formed in a blue pixel, a red filter 170 b formed in a red pixel, and a green filter 170 c formed in a green pixel. However, the present disclosure is not limited thereto and may include a cyan filter, a magenta filter and/or a yellow filter instead or additionally.

An insulation layer 180 is formed between the device 100 and the color filter layer 170 . The insulation layer 180 may be omitted.

Focusing lens (not shown) may be further formed on the color filter layer 170 . The focusing lens may control a direction of incident light and gather the light in one region. The focusing lens may have a shape of, in some example embodiments, a cylinder or a hemisphere, but is not limited thereto.

FIG. 12 is a top plan view schematically showing an image sensor according to some example embodiments, and FIG. 13 is a cross-sectional view showing an example of the image sensor of FIG. 12 .

Referring to FIGS. 12 and 13 , an image sensor 400 according to some example embodiments includes a semiconductor substrate 110 integrated with photo-sensing devices 150 a and 150 b , a transmission transistor (not shown), and a charge storage 155 , a lower insulation layer 160 , a color filter layer 170 , an upper insulation layer 80 , and the aforementioned device 100 . The aforementioned device 100 may be a photoelectric conversion device.

The semiconductor substrate 110 may be a silicon substrate, and is integrated with the photo-sensing devices 150 a and 150 b , the transmission transistor (not shown), and the charge storage 155 . The photo-sensing devices 150 a and 150 b may be photodiodes.

›DETAILED DESCRIPTION · 17 of 18

The photo-sensing devices 150 a and 150 b and the transmission transistor, and/or the charge storage 155 may be integrated in each pixel. As shown in the drawing, the photo-sensing devices 150 a and 150 b may be included in the blue pixel and the red pixel, respectively. The charge storage 155 may be included in the green pixel.

The photo-sensing devices 150 a and 150 b may be configured to sense light and the sensed information may be transmitted by a transmission transistor. The charge storage 155 is electrically connected to the device 100 and the information of the charge storage 155 may be transmitted by a transmission transistor.

A metal wire (not shown) and a pad (not shown) are formed on the semiconductor substrate 110 . In order to decrease signal delay, the metal wire and pad may be made of a metal having low resistivity, in some example embodiments, aluminum (Al), copper (Cu), silver (Ag), and alloys thereof, but are not limited thereto. Further, the present disclosure is not limited to the structure, and the metal wire and pad may be under the photo-sensing devices 150 a and 150 b.

The lower insulation layer 160 is formed on the metal wire and the pad. The lower insulation layer 160 may be made of an inorganic insulating material such as a silicon oxide and/or a silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The lower insulation layer 160 has a trench exposing the charge storage 155 . The trench may be filled with fillers.

A color filter layer 170 is formed on the lower insulation layer 160 . The color filter layer 170 includes a blue filter 170 a formed in a blue pixel and a red filter 170 b in a red pixel. In some example embodiments, a green filter is not included, but a green filter may be further included.

The upper insulation layer 80 is formed on the color filter layer 170 . The upper insulation layer 80 may eliminate a step caused by the color filter layer 170 and smoothen the surface. The upper insulation layer 80 and the lower insulation layer 160 may include a contact hole (not shown) exposing a pad, and a through-hole (e.g., trench 85 ).

The aforementioned device 100 is formed on the upper insulation layer 80 . The device 100 may be one of the devices 100 shown in FIG. 1, 3, 5, 7 , or 9 . The device 100 may be a photoelectric conversion device and specific descriptions therefore are the same as described above. The anode 10 or the cathode 20 of the device 100 may be connected to the charge storage 155 .

Focusing lens (not shown) may be further formed on the device 100 . The focusing lens may control a direction of incident light and gather the light in one region. The focusing lens may have a shape of, in some example embodiments, a cylinder or a hemisphere, but is not limited thereto.

FIG. 14 is a cross-sectional view showing an image sensor according to some example embodiments.

Referring to FIG. 14 , like some example embodiments, including the example embodiments shown in FIGS. 12-13 , the image sensor 500 according to some example embodiments includes a semiconductor substrate 110 integrated with photo-sensing devices 150 a and 150 b , a transmission transistor (not shown), and a charge storage 155 , a lower insulation layer 160 , a color filter layer 170 , an upper insulation layer 80 , and a device 100 .

However, unlike some example embodiments, including the example embodiments shown in FIGS. 12-13 , in the image sensor 500 according to some example embodiments, including the example embodiments shown in FIG. 14 , the photo-sensing devices 150 a and 150 b are stacked in the vertical direction and the color filter layer 170 is omitted. The photo-sensing devices 150 a and 150 b are electrically connected to the charge storage (not shown) and information may be transmitted by a transmission transistor. The photo-sensing devices 150 a and 150 b may selectively absorb light in each wavelength spectrum depending on a stacking depth.

The device 100 may be the device 100 shown in FIG. 1, 3, 5, 7 , or 9 . The device 100 may be a photoelectric conversion device. The specific description thereof is the same as described above. The anode 10 or cathode 20 of the device 100 may be connected to the charge storage 155 .

FIG. 15 is a top plan view schematically showing an image sensor according to some example embodiments and FIG. 16 is a cross-sectional view of the image sensor FIG. 15 .

The image sensor 600 according to some example embodiments has a structure in which a green device configured to selectively absorb light in a green wavelength spectrum, a blue device configured to selectively absorb light in a blue wavelength spectrum, and a red device configured to selectively absorb light in a red wavelength spectrum.

The image sensor 600 according to some example embodiments includes a semiconductor substrate 110 , a lower insulation layer 160 , an intermediate insulation layer 65 , an upper insulation layer 80 , a first device 100 a , a second device 100 b , and a third device 100 c.

The semiconductor substrate 110 may be a silicon substrate, and is integrated with the transmission transistor (not shown) and the charge storages 155 a , 155 b , and 155 c.

A metal wire (not shown) and a pad (not shown) are formed on the semiconductor substrate 110 , and the lower insulation layer 160 is formed on the metal wire and the pad.

The first device 100 a , the second device 100 b , and the third device 100 c are sequentially formed on the lower insulation layer 160 .

The first device 100 a , the second device 100 b , and the third device 100 c may independently be one of the devices 100 shown in FIG. 1, 3, 5, 7 , or 9 . The device 100 may be a photoelectric conversion device. The specific description thereof is the same as described above. The anode 10 or cathode 20 of the device 100 may be connected to the charge storages 155 a , 155 b , and 155 c.

The active layer 30 of the first device 100 a may be a photoelectric conversion device configured to selectively absorb light of any wavelength spectrum of red, blue, and green to photoelectrically convert the light. In some example embodiments, the first device 100 a may be a red photoelectric conversion device. The anode 10 or the cathode 20 of the first device 100 a may be electrically connected to the first charge storage 155 a.

›DETAILED DESCRIPTION · 18 of 18

The intermediate insulation layer 65 is formed on the first device 100 a.

The second device 100 b is formed on the intermediate insulation layer 65 .

The active layer 30 of the second device 100 b may be a photoelectric conversion device configured to selectively absorb light of any wavelength spectrum of red, blue, and green to photoelectrically convert the light. In some example embodiments, the second device 100 b may be a blue photoelectric conversion device. The anode 10 or the cathode 20 of the second device 100 b may be electrically connected to the second charge storage 155 b.

The upper insulation layer 80 is formed on the second device 100 b . The lower insulation layer 160 , the intermediate insulation layer 65 , and the upper insulation layer 80 have a plurality of through-holes that reveal charge storages 155 a , 155 b , and 155 c.

The third device 100 c is formed on the upper insulation layer 80 . The active layer 30 of the third device 100 c may be a photoelectric conversion device configured to selectively absorb light of any wavelength spectrum of red, blue, and green to photoelectrically convert the light. In some example embodiments, the second device 100 b may be a green photoelectric conversion device. The anode 10 or the cathode 20 of the third device 100 c may be electrically connected to the third charge storage 155 c.

Focusing lens (not shown) may be further formed on the third device 100 c . The focusing lens may control a direction of incident light and gather the light in one region. The focusing lens may have a shape of, in some example embodiments, a cylinder or a hemisphere, but is not limited thereto.

Although the drawing illustrates a structure in which the first device 100 a , the second device 100 b , and the third device 100 c are sequentially stacked, the present disclosure is not limited thereto and the stacking order may be variously changed.

As described above, since the first device 100 a , the second device 100 b , and the third device 100 c , which absorb light of different wavelength spectrums, have a stacked structure, a size of the image sensor may be further reduced to realize a down-sized image sensor.

The above-described device and image sensor are each applicable to various electronic devices, but may be applied to example mobile phones, digital cameras, etc., but is not limited thereto.

FIG. 26 is a schematic diagram of an electronic device according to some example embodiments.

Referring to FIG. 26 , an electronic device 2600 includes a processor 2620 , a memory 2630 , and a device 2640 electrically connected through a bus 2610 . The device 2640 may include any of the aforementioned various devices 100 and/or sensors 300 - 600 according to any of the example embodiments. The memory 2630 , which may be a non-transitory computer readable medium, may store a program of instructions. The processor 2620 may perform a memory program and thus at least one function, including controlling the device 2640 . The processor 2620 may execute the stored program of instructions to perform one or more functions. For example, the processor 2620 may be configured to process electric signals generated by the device 2640 .

Hereinafter, some example embodiments are illustrated in more detail with reference to the following examples. However, the present scope is not limited to the following examples.

Manufacture of Device I

›Example 1

ITO is sputtered on a glass substrate to form a 150 nm-thick anode (WF: 4.9 eV). On the anode, a compound represented by Chemical Formula A-1 is deposited on the anode to form a 2.5 nm-thick lower auxiliary layer (HOMO: 5.10 eV), and a compound represented by Chemical Formula A-2 is deposited on the lower auxiliary layer to form a 2.5 nm-thick upper auxiliary layer (HOMO: 5.31 eV). Then, a p-type semiconductor represented by Chemical Formula B (Amax: 545 nm) and an n-type semiconductor, fullerene C60 are co-deposited in a volume ratio of 1:1 on the upper auxiliary layer to form a 100 nm-thick photoelectric conversion layer (HOMO: 5.55 eV). Then, Yb is thermally evaporated on the photoelectric conversion layer to form a 1.5 nm-thick electron buffer layer (WF: 2.6 eV). Then, ITO is sputtered on the electron buffer layer to form a 7 nm-thick cathode (WF: 4.7 eV). Then, aluminum oxide (Al 2 O 3 ) is deposited on the cathode to form a 50 nm-thick anti-reflective layer and then, sealed with a glass plate to manufacture a device.

Comparative Example 1

A device is manufactured according to the same method as Example 1 except that a compound represented by Chemical Formula A-3 is deposited to form a single 5 nm-thick auxiliary layer (HOMO: 5.73 eV), instead of the lower and upper auxiliary layers.

Comparative Example 2

A device is manufactured according to the same method as Example 1 except that a compound represented by Chemical Formula A-4 is deposited to form a 2.5 nm-thick upper auxiliary layer (HOMO: 5.43 eV), instead of the compound represented by Chemical Formula A-2.

Comparative Example 3

A device is manufactured according to the same method as Example 1 except that a compound represented by Chemical Formula A-5 is deposited to form a 2.5 nm-thick upper auxiliary layer (HOMO: 5.22 eV), instead of the compound represented by Chemical Formula A-2.

Comparative Example 4

A device is manufactured according to the same method as Example 1 except that a compound represented by Chemical Formula A-6 is deposited to form a 2.5 nm-thick upper auxiliary layer (HOMO: 5.50 eV), instead of the compound represented by Chemical Formula A-2.

Comparative Example 5

A device is manufactured according to the same method as Example 1 except that a compound represented by Chemical Formula A-7 is deposited to form a 2.5 nm-thick lower auxiliary layer (HOMO: 5.00 eV), instead of the compound represented by Chemical Formula A-2, and a compound represented by Chemical Formula A-6 is deposited to form a 2.5 nm-thick upper auxiliary layer (HOMO: 5.50 eV), instead of the compound represented by Chemical Formula A-2.

Manufacture of Device II

›Example 2

A device is manufactured according to the same method as Example 1 except that a 5 nm-thick upper auxiliary layer is formed instead of the 2.5 nm-thick upper auxiliary layer.

Comparative Example 6

A device is manufactured according to the same method as Comparative Example 2 except that a 5 nm-thick upper auxiliary layer is formed instead of the 2.5 nm-thick upper auxiliary layer.

Comparative Example 7

A device is manufactured according to the same method as Comparative Example 4 except that a 5 nm-thick upper auxiliary layer is formed instead of the 2.5 nm-thick upper auxiliary layer.

Comparative Example 8

A device is manufactured according to the same method as Comparative Example 4 except that a compound represented by Chemical Formula A-3, instead of the compound represented by Chemical Formula A-1, is deposited to form a 5 nm-thick lower auxiliary layer (HOMO: 5.73 eV), and a compound represented by Chemical Formula A-1, instead of the compound represented by Chemical Formula A-2, is deposited to form a 2.5 nm-thick upper auxiliary layer (HOMO: 5.10 eV).

Evaluation I

Energy barriers of the devices according to Examples and Comparative Examples are shown in Table 1 and FIGS. 17 to 23 .

FIG. 17 is an energy diagram showing the energy levels from the anode to the active layer of the device according to Examples 1 and 2, FIG. 18 is a diagram showing the energy levels from the anode to the active layer of the device according to Comparative Example 1, FIG. 19 is a diagram showing the energy levels from the anode to the active layer of the device according to Comparative Examples 2 and 6, FIG. 20 is a diagram showing the energy levels from the anode to the active layer of the device according to Comparative Example 3, FIG. 21 is a diagram showing the energy levels from the anode to the active layer of the device according to Comparative Examples 4 and 7, FIG. 22 is a diagram showing the energy levels from the anode to the active layer of the device according to Comparative Example 5, and FIG. 23 is a diagram showing the energy levels from the anode to the active layer of the device according to Comparative Example 8.

Evaluation II

Remaining electron characteristics of the devices according to Examples and Comparative Examples are evaluated.

The remaining electron characteristics are evaluated by measuring an amount of charge carriers which are photoelectrically converted in one frame but not used for a signal treatment and thus read in the following frame and specifically, measuring a current amount measured by 10 −6 second unit with a Keithley 2400 equipment after irradiating the devices according to Examples and Comparative Examples with photoelectrically-convertible light of a green wavelength spectrum for a particular (or, alternatively, predetermined) time and then, turning it off. The remaining electron amount is measured by h+/s/μm 2 unit at 5000 lux, and when the remaining electron amounts of the devices of Examples 1 and 2 are respectively regarded as “100” (reference), the remaining electron amounts of the devices according to Comparative Examples are relatively evaluated.

The remaining electron characteristics of Examples and Comparative Examples including an auxiliary layer having a total thickness (T) of 5 nm are shown in Table 2, and the remaining electron characteristics of Examples and Comparative Examples including an auxiliary layer having a total thickness (T) of 7.5 nm are shown in Table 3.

Referring to Tables 2 and 3, the devices according to Examples exhibit improved remaining electron characteristics compared with the devices according to Comparative Examples.

Evaluation III

Photoelectric conversion efficiency of the photoelectric conversion devices according to Examples and Comparative Examples is evaluated.

The photoelectric conversion efficiency (EQE) is evaluated in a wavelength spectrum of 400 nm to 720 nm by using an Incident Photon to Current Efficiency (IPCE) method.

FIG. 24 is a graph showing photoelectric conversion efficiency of the devices according to Example 1 and Comparative Examples 1 to 4, and FIG. 25 is a graph showing photoelectric conversion efficiency of the devices according to Example 2 and Comparative Examples 1, 6, and 7.

Referring to FIGS. 24 and 25 , the devices according to Examples exhibit equivalent or improved photoelectric conversion efficiency compared with the devices according to Comparative Examples. In addition, the photoelectric conversion efficiency is not deteriorated depending on a thickness of the auxiliary layer.

While this disclosure has been described in connection with what is presently considered to be practical example embodiments, it is to be understood that the inventive concepts are not limited to said example embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

›Tables in the description — 3

TABLE 1 — * ΔΦ 3 : a difference between the HOMO energy level of the upper auxiliary layer and the HOMO energy level of the lower auxiliary layer.

	ΔΦ 1 (eV)	ΔΦ 2 (eV)	ΔΦ 3 (eV)
Example 1, 2	0.24	0.20	0.21
Comparative Example 1	0.18	0.83	—
Comparative Example 2, 6	0.12	0.20	0.33
Comparative Example 3	0.33	0.20	0.12
Comparative Example 4, 7	0.05	0.20	0.40
Comparative Example 5	0.05	0.1	0.5
Comparative Example 8	0.45	0.83	0.63
*ΔΦ 1 : a difference between the HOMO energy level of the active layer and the HOMO energy level of the upper auxiliary layer,
*ΔΦ 2 : a difference between the HOMO energy level of the lower auxiliary layer and the work function of the anode, and

TABLE 2

T: 5 nm	Remaining electron relative value
Example 1	100 (ref.)
Comparative Example 1	447
Comparative Example 2	143
Comparative Example 3	188
Comparative Example 4	234
Comparative Example 5	514

TABLE 3

T: 7.5 nm	Remaining electron relative value
Example 2	100 (ref.)
Comparative Example 6	184
Comparative Example 7	192
Comparative Example 8	304

Claims

22 · 1 independent · depth 6

22 granted claims

›1.independentA device, comprising: a first electrode and a second electrode; an active layer between the first electrode and the second electrode; and a plurality …+21

A device, comprising: a first electrode and a second electrode; an active layer between the first electrode and the second electrode; and a plurality of auxiliary layers between the first electrode and the active layer, wherein the plurality of auxiliary layers includes a first auxiliary layer and a second auxiliary layer, the first auxiliary layer proximate to the active layer in relation to the second auxiliary layer, the second auxiliary layer proximate to the first electrode in relation to the first auxiliary layer, wherein the first electrode has a work function, the active layer, the first auxiliary layer, and the second auxiliary layer have respective energy levels that are respective highest occupied molecular orbital (HOMO) energy levels of the active layer, the first auxiliary layer, and the second auxiliary layer, or respective lowest unoccupied molecular orbital (LUMO) energy levels of the active layer, the first auxiliary layer, and the second auxiliary layer, and the work function of the first electrode and the respective energy levels of the active layer, first auxiliary layer, and the second auxiliary layer are each measured by photoelectron spectroscopy, wherein the energy level of the active layer, the energy level of the first auxiliary layer, the energy level of the second auxiliary layer, and the work function of the first electrode have different magnitudes from each other and at least partially define a sequentially-changing energy level through the device, such that a magnitude of the energy level of the first auxiliary layer is between a magnitude of the energy level of the active layer and a magnitude of the energy level of the second auxiliary layer, and the magnitude of the energy level of the second auxiliary layer is between the magnitude of the energy level of the first auxiliary layer and a magnitude of the work function of the first electrode, and wherein the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy Relationship Equation 1: |ΔΦ 1 −ΔΦ 2 |≤0.1 eV [Relationship Equation 1] wherein, in Relationship Equation 1, ΔΦ 1 is an energy barrier between the active layer and the first auxiliary layer that is a difference between the energy level of the active layer and the energy level of the first auxiliary layer, and ΔΦ 2 is an energy barrier between the second auxiliary layer and the first electrode that is a difference between the energy level of the second auxiliary layer and the work function of the first electrode.

›2.↳ 1The device of claim 1 , wherein the first auxiliary layer is in contact with the active layer, and the second auxiliary layer is in contact with the f…d2

›3.↳ 1The device of claim 1 , wherein the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy Relationship …d2+2

›4.↳ 3The device of claim 3 , wherein each of ΔΦ 1 , ΔΦ 2 , and ΔΦ 3 is less than or equal to about 0.5 eV.d3

›5.↳ 3The device of claim 3 , wherein the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy Relationship …d3

The device of claim 3 , wherein the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy Relationship Equations 1E, 2E, and 3E, [Relationship Equation 1E] the magnitude of the energy level of the first auxiliary layer is between the magnitude of the energy level of the active layer and a magnitude of the energy level of the third auxiliary layer, the magnitude of the energy level of the third auxiliary layer is between the magnitude of the energy level of the first auxiliary layer and the magnitude of the energy level of the second auxiliary layer, and the magnitude of the energy level of the second auxiliary layer is between the magnitude of the energy level of the third auxiliary layer and the magnitude of the work function of the first electrode, and the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode satisfy Relationship Equations 4 and 5: |ΔΦ 2 −ΔΦ 4 |≤0.1 eV [Relationship Equation 4] |ΔΦ 1 −ΔΦ 5 |≤0.1 eV [Relationship Equation 5] wherein, in Relationship Equations 4 and 5, ΔΦ 1 is the energy barrier between the active layer and the first auxiliary layer that is the difference between the energy level of the active layer and the energy level of the first auxiliary layer, ΔΦ 2 is the energy barrier between the second auxiliary layer and the first electrode that is the difference between the energy level of the second auxiliary layer and the energy level of the first electrode, 0<|ΔΦ 1 −ΔΦ 2 |≤0.05 eV 0<|ΔΦ 1 −ΔΦ 3 |≤0.05 eV [Relationship Equation 2E] 0<|ΔΦ 3 −ΔΦ 2 |≤0.05 eV [Relationship Equation 3E] wherein, in Relationship Equation 1E to 3E, ΔΦ 1 is the energy barrier between the active layer and the first auxiliary layer that is the difference between the energy level of the active layer and the energy level of the first auxiliary layer, ΔΦ 2 is the energy barrier between the second auxiliary layer and the first electrode that is the difference between the energy level of the second auxiliary layer and the work function of the first electrode, and ΔΦ 3 is the energy barrier between the first auxiliary layer and the second auxiliary layer that is the difference between the energy level of the first auxiliary layer and the energy level of the second auxiliary layer.

›6.↳ 1The device of claim 1 , wherein the plurality of auxiliary layers further includes a third auxiliary layer between the first auxiliary layer and the s…d2+2

›9.↳ 1The device of claim 1 , wherein the first electrode is an anode and the second electrode is a cathode, and each energy barrier is a difference between…d2+5

›10.↳ 9The device of claim 9 , further comprising: an electron buffer layer between the second electrode and the active layer.d3+4

›11.↳ 10The device of claim 10 , wherein the electron buffer layer includes a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy ther…d4

›12.↳ 10The device of claim 10 , wherein the electron buffer layer includes a first electron buffer layer and a second electron buffer layer, the first electr…d4+2

›15.↳ 1The device of claim 1 , wherein the first electrode is a cathode, the second electrode is an anode, and the energy barrier is a difference between LUM…d2+1

›17.↳ 1The device of claim 1 , wherein the first auxiliary layer and the second auxiliary layer each have a thickness of less than or equal to about 10 nm.d2

›18.↳ 1The device of claim 1 , wherein the first auxiliary layer and the second auxiliary layer each include an organic material.d2

›19.↳ 1The device of claim 1 , wherein the active layer is a photoelectric conversion layer configured to absorb light in at least part of a wavelength spect…d2

›20.↳ 1A sensor comprising the device of claim 1 .d2+1

›21.↳ 1An electronic device comprising the device of claim 1 .d2

Classifications

3 codes

IPC · International Patent Classification

Section H — Electricity

H10K99/00
H10K30/30
H10K30/89

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2.0 y

735 days filing → grant

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non-final + final

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Golam Mowla

art unit 1721 · TC 1700

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20210066628 A1	4 Mar 2021

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8 members · 4 offices

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US · EP · KR · CN

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Office	Publication	Kind	Published	Filed	Status	Title
US	US-2021066628-A1	A1	4 Mar 2021	4 Aug 2020	published	Device and sensor and electronic device
USthis patent	US-11411192-B2	B2	9 Aug 2022	4 Aug 2020	granted	Devices and sensors and electronic devices
EP	EP-3787051-A1	A1	3 Mar 2021	18 Aug 2020	published	Dispositifs et capteurs et dispositifs électroniquesfr
EP	EP-3787051-B1	B1	2 Apr 2025	18 Aug 2020	granted	Vorrichtungen und sensoren und elektronische vorrichtungende
KR	KR-20210027102-A	A	10 Mar 2021	18 Aug 2020	published	소자, 센서 및 전자 장치ko
KR	KR-102939761-B1	B1	16 Mar 2026	18 Aug 2020	granted	Device and sensor and electronic device
CN	CN-112447909-A	A	5 Mar 2021	25 Aug 2020	published	Optoelectronic component, sensor and electronic device
CN	CN-112447909-B	B	25 Nov 2025	25 Aug 2020	granted	光电子器件和传感器和电子设备zh

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