USPatentGranted
B2

Semiconductor device

Granted 13 Aug 2019 · 2 office actions

Current assignee: Toshiba Memory Corporation · originally Toshiba

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Inventors: Shinya Okuno, Shigeki Nagasaka, Toshiyuki Kouchi · Examiner: Pho M Luu · AU 2824 · TC 2800

Life of the patent

8 dated events
⤢ drag to zoom20152020202520302035ProsecutionTerm & fees
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Abstract

A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.

Claims

14 · 1 independent · depth 5
1234567891011121314
14 granted claims

Classifications

10 codes
IPC · International Patent Classification
Section G — Physics
  • G11C16/04
  • G11C16/10
  • G06F5/06
  • G11C16/32
  • G11C7/10
  • G11C16/12
  • G11C7/02
  • G11C16/26
  • G11C16/16
  • G06F13/16

Claim changes

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File wrapper

⤢ drag to zoomJul 2018Oct 2018Jan 2019Apr 2019Jul 2019Oct 2019USPTOApplicantNon-final rejectionResponse after non-finalNotice of allowance
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Pendency
1.2 y
424 days filing → grant
Office actions
1
non-final + final
Responses
1
no RCE
Examiner
Pho M Luu
art unit 2824 · TC 2800
Citations: 36 back · 0 forward

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Term & fees

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Priority chain

2 priority documents
Priority
28 May 2015
earliest claimed
›Priority documents — 2
TypeDocumentDate
provisionalUS 6216770328 May 2015
related publicationUS 20180294038 A111 Oct 2018

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Citations

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